capizzipubl.html

LIST OF PUBLICATIONS BY ARGUMENTS (numbers refer to a list by date)

Ferroelectric Perovskites

1) Monodomain Strontium Titanate
K.A. Mueller, W. Berlinger, M. Capizzi, and H. Granicher
Solid State Commun. 8, 549 (1970)

2) Optical Gap of Strontium Titanate (Deviation from Urbach Tail Behavior)
M. Capizzi and A. Frova
Phys. Rev. Letters 25, 1298 (1970)

3) Determination of the Nature of the Optical Gap of SrTiO3
M. Capizzi and A. Frova
Il Nuovo Cimento 5B, 181 (1971)

4) Absorption Edge and Structural Phase Transition in SrTiO3
M. Capizzi and A. Frova
Solid State Commun. 10, 979 (1972)

5) Is there a Unified Mechanism Underlying Urbach's Rule?
M. Capizzi, A. Frova, and D. Dunn
Solid State Commun. 10, 1165 (1972)

6) Distortion-Enhanced Optical Absorption in SrTiO3 at the Cubic-to-Tetragonal Transition
M. Capizzi and A. Frova
Phys. Rev. Letters 29, 1741 (1972)

7) Thermomodulation Experiment at the Cubic-to-Tetragonal Phase Transition in SrTiO3
M. Capizzi, Q. Taccetti, and A. Frova
Surface Science 37, 258 (1973)

High Optical Excitation in Semiconductors

8) Volume and Surface Effects in the Luminescence Decay of Electron-Hole Drops in Ge
C. Benoit à la Guillaume, M. Capizzi, B. Etienne, and M. Voos
Solid State Commun. 15, 1031 (1974)

9) Electron-Hole Drops in Si
M. Capizzi, M. Voos, C. Benoit à la Guillaume, and J.C. McGroddy
Solid State Commun. 16, 709 (1975)

20) Mott distortion of the Electron-Hole Fluid Phase Diagram
G.A. Thomas, J.B. Mock, and M. Capizzi
Phys. Rev. B 18, 4250 (1978)

25) E-H Plasma Luminescence in GaAsP above Direct-Indirect Crossover
S. Modesti, A. Frova, M. Capizzi, L.G. Quagliano, J.L. Staehli, and M. Guzzi
J. Phys. Soc. Japan 49, Suppl. A, 515 (1980)

29) Electron-Hole Plasma Expansion in Direct-Gap GaAs1-xPx
S. Modesti, A. Frova, J.L. Staehli, M. Guzzi, and M. Capizzi
Phys. Stat. Sol. B 108, 281 (1981)

30) The E-H Plasma in Direct-Gap Ga1-xAlxAs under 3-D Confinement
M. Capizzi, A. Frova, F. Martelli, S. Modesti, L.G. Quagliano, J.L. Staehli, M. Guzzi, R.A. Logan, and G. Chiaretti
Physica B 117+118 , 333 (1983)

31) Electron-Hole Plasma in Direct-Gap Ga1-xAlxAs and k-Selection Rule
M. Capizzi, M. Modesti, A. Frova, J.L. Staehli, M. Guzzi, and R.A. Logan
Phys. Rev. B 29, 2028 (1984)32)
Luminescence Lineshape Analysis of the Electron-Hole Plasma in Direct-Gap Ga1-xAlxAs Random-Phase-Approximation Approach
A. Selloni, S. Modesti, and M. Capizzi
Phys. Rev. B 30, 821 (1984)

33) A. Selloni, M. Capizzi, and S. Modesti
Electron-Hole Plasma in Ga1-xAlxAs Expansion and Confinement
J. of Lumin. 30, 65 (1985)

34) Electron-Hole Plasma in Direct-Gap Semiconductors
M. Capizzi, A. Frova, S. Modesti, A. Selloni, J.L. Staehli, and M. Guzzi
Helv. Phys. Acta 58, 272 (1985)

37) Electron-Hole Plasma Diffusion in Direct-Gap Semiconductors?
M. Guzzi, J.L. Staehli, M. Capizzi, and M. Logan
Europhysics Letters 2, 547 (1986)

Exciton Spectroscopy in Semiconductors

10) Magnetoluminescence and Reflectance Investigation of the CdS Biexciton
F. Evangelisti, M. Capizzi, M. De Crescenzi, A. Frova, and G. Baldacchini
Solid State Commun. 18, 795 (1976)

11) Experimental Reflectivity Spectra and Additional Boundary Conditions in CdS
F. Patella, F. Evangelisti, and M. Capizzi
Solid State Commun. 20, 23 (1976)

12) Valley-Anisotropy Splitting of Indirect Excitons in Ge and Si M. Capizzi, F. Evangelisti, A. Frova, and P. Valfre'
Proc. of the 13th Internat. Conf. on the Physics of Semiconductors, Roma 1976, ed. Fumi, p. 857

13) The indirect Recombination Mechanisms in Germanium
G.A. Thomas and M. Capizzi
Proc. of the 13th Internat. Conf. on the Physics of Semiconductors, Roma 1976, ed. Fumi, p. 915

14) Insensitivity to Selection Rules of Two Photon Luminescence Spectra
G.A. Thomas, M. Capizzi, W. Weber, E.I. Blount, and M. Lax
Phys. Rev. Letters 37, 1000 (1976)

15) Determination of the Mass-Anisotropy Exciton Splitting in Silicon
M. Capizzi, J.-C. Merle, P. Fiorini, and A. Frova
Solid State Commun. 24, 451 (1977)

16) Fine Structure of Indirect Exciton in GaP
M. Capizzi, F. Evangelisti, P. Fiorini, A. Frova, and F. Patella
Solid State Commun. 24, 801 (1977)

17) Uniaxially Stressed Silicon Fine Structure of the Exciton and Deformation Potentials
J.-C. Merle, M. Capizzi, P. Fiorini, and A. Frova
Phys. Rev. B 17, 4821 (1978)

18) Strain-Narrowing of Excitons in Germanium
J.B. Mock, M. Capizzi, and G. A. Thomas
J. Phys. Chem. Solids 39, 1231 (1978)

21) Indirect Recombination Mechanisms in Germanium
G.A. Thomas, E.I. Blount, and M. Capizzi
Phys. Rev. B 19, 702 (1979)

27) G-X Mixing of the Free and Bound Exciton in GaAsP
M. Capizzi, S. Modesti, F. Martelli, and A. Frova
Solid State Commun. 39, 333 (1981)

123) Formation and Relaxation of Exciton-carbon Acceptor Complexes in GaAs
M. Grassi Alessi, A. Patane', A. Polimeni, M. Capizzi, F. Martelli, P. Borri, M. Gurioli, and M. Colocci
Phys. Rev. B 56, 3834 (1997)

Highly Doped Semiconductors: The Insulator to Metal transition

19) Submillimeter Wave Study of the Metal-Insulator Transition in Phosporous Doped Si
M. Capizzi, G.A. Thomas, G. Devlin, F. De Rosa, J.B. Mock, and S.J. Allen,Jr.
Proc. of the 14th Inter. Conf. on the Physics of Semiconductors, Edinburgh 1978, ed. B.L.H. Wilson, p. 957

22) Observation of a Donor Exciton Band in Silicon
M. Capizzi, G.A. Thomas, F. De Rosa, R.N. Bhatt, and T.M. Rice
Solid State Commun. 31, 611 (1979)

23) Observation of the Approach to a Polarization Catastrophe
M. Capizzi, G.A. Thomas, F. De Rosa, R.N. Bhatt, and T.M. Rice
Phys. Rev. Letters 44, 1019 (1980)

24) Optical Measurements of the Approach to the Anderson Transition G.A. Thomas, M. Capizzi, and F. De Rosa
Philos. Mag. B 42, 913 (1980)

26) Optical Study of Interacting Donors in Semiconductors
G.A. Thomas, M. Capizzi, F. De Rosa, R.N. Bhatt, and T.M. Rice
Phys. Rev. B 23, 5472 (1981)

28) Optical and Precursive Properties Approaching the Metal to Insulator Transition in Highly Doped Si
M. Capizzi, T.F. Rosenbaum, K.A. Andres, G.A. Thomas, R.N. Bhatt, and M. Rice
Lecture Notes in Physics 149, 235 (1981)

38) Short Length Scale Conductivity in Degenerate Superlattices
M. Capizzi, H.K. Ng, G.A. Thomas, R.N. Bhatt and A.C. Gossard
Proc. of the 18th Internat. Conf. on the Physics of Semiconductors, Stockholm 1986, (World Sci. Publ. Co., Singapore); p.759

39) Short-length-scale Conductivity Enhancement in a Superlattice
H.K. Ng, M. Capizzi, G.A. Thomas, R.N. Bhatt, and A.C. Gossard
Phys. Rev. B 33, 7329 (1986)

Amorphous Hydrogenated Silicon and Alloys

35) Characterization and Passivation of Grain Boundaries in Semicrystalline Solar Cells
L. Sardi, D. Ragghianti, M. Capizzi, C. Coluzza, D. della Sala, A. Frova, M. Prudenziati, and P. Davoli
Int. PVSEC-1, 59 (1984)

36) Passivation in Poly-Silicon Solar Cells by Ion-Gun Hydrogen Implant
M. Capizzi, C. Coluzza, D. della Sala, A. Frova, L. Sardi, D. Ragghianti, M. Prudenziati, and L. Moro
Proc. of the 6th Intern. Photovoltaic Solar Energy Conf. (6th E.C. PSEC), 1001 (1985)

41) Growth and Characterization of a-Si1-xGex H Alloys
D. della Sala, M. Nsabimana, M. Capizzi, F. Evangelisti, U. Coscia, and M. Vittori
Proc. of the 7th Intern. Photovoltaic Solar Energy Conf., Sevilla, Spain, Oct. 1986, (D. Reidel Publ. Co., Dordrecht ); p. 1199

46) a-Si1-xGex H Alloys for Solar Cells
D. della Sala, M. Capizzi, F. Evangelisti, and U. Coscia
J. Non-Cryst. Solids 97-98, 1075 (1987)

Treatment of LBC Profiles

45) Fourier Transform Analysis of Light Beam Induced Current Profiles A. Mittiga and M. Capizzi
J. Appl. Phys. 62, 3443 (1987)

48) Oblique Grain Boundaries Analysis of Light and Electron Beam Induced Current Profiles in Silicon
A. Mittiga, M. Capizzi, C. Coluzza, A. Frova, V. Parisi, D. Cavalcoli, L. Moro, and M. Prudenziati
J. Appl. Phys. 63, 4748 (1988)

Hydrogen in Semiconductors: Diffusion and Defect Passivation

40) Hydrogen Diffusion and Passivation in Silicon a New Approach
M. Capizzi, A. Mittiga, and A. Frova
Proc. of the 18th Internat. Conf. on the Physics of Semiconductors, Stockholm 1986, (World Sci. Publ. Co., Singapore); p. 995

42) Hydrogen in Silicon Diffusion and Shallow Impurity Deactivation
M. Capizzi and A. Mittiga
Physica B 146, 19 (1987)

43) Hydrogen in Crystalline Silicon a Deep Donor?
M. Capizzi and A. Mittiga
Appl. Phys. Lett. 50, 918 (1987)

44) Hydrogen Passivation of Shallow Acceptors in c-Si an ab Initio Approach
A. Amore Bonapasta, A. Lapiccirella, N. Tomassini, and M. Capizzi
Phys. Rev. B 36, 6228 (1987)

49) Hydrogen (and Muonium) in Crystalline Silicon Static Properties and Diffusion Mechanisms
A. Amore Bonapasta, A. Lapiccirella, N. Tomassini, and M. Capizzi
Europhysics Letters 7, 145 (1988)

51) Hydrogen Ion-Beam Induced Changes in the Photoluminescence of GaSb/AlSb MQW Structures
M. Capizzi, C. Coluzza, A. Forchel, and A. Frova
Superlattices and Microstructures 5, 297 (1989)

52) Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon
A. Amore Bonapasta, A. Lapiccirella, N. Tomassini, and M. Capizzi
Material Science Forum 38-41, 1051 (1989)

56) Si-P-H Complexes in Crystal Silicon a Theoretical Study
A. Amore Bonapasta, A. Lapiccirella, N. Tomassini, and M. Capizzi
Phys. Rev. B 39, 12630 (1989)

57) Study of Hydrogenation in GaSb/AlSb MQW Structures by Time-Resolved Luminescence
M. Capizzi, U. Cebulla, C. Coluzza, A. Forchel, and A. Frova
Appl. Phys. Lett. 55, 772 (1989)

58) Effect of Hydrogen Implantation on Shallow and Deep Levels in MBE-GaAs A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, L. Vanzetti, P. Allegri, V. Avanzini, M. Capizzi, and C. Coluzza
J. Vac. Sc. and Technol. B 7, 1103 (1989)

61)Vibrational Frequencies of Si-P-H Complexes in Crystalline Silicon a Theoretical Study
A. Amore Bonapasta, P. Giannozzi, and M. Capizzi
Phys. Rev. B 42, 3175 (1990)

62) Photoreflectance and Photoluminescence Study of Defect Passivation by Hydrogen in GaAlAs/GaAs/GaAlAs Heterostructures
M. Capizzi, C. Coluzza, P. Frankl, A. Frova, X. Yin, Fred H. Pollak, and R.N. Sacks
SPIE 1286, 50 (1990)

63) Defect Passivation by Hydrogen in III-V Semiconductor Epitaxial Films
A. Frova and M. Capizzi
Thin Solid Films 193/194, 211 (1990)

64) Luminescence of Step-by-step Hydrogenated GaAs/GaAlAs MQW M. Capizzi, C. Coluzza, P. Frankl, A. Frova M. Colocci, M. Gurioli, A. Vinattieri, F. Martelli, L. Pavesi, and F.K. Reinhart
Proc. of the 20th Internat. Conf. on the Physics of Semiconductors, 6-10 August 1990, Tessalonica, edited by E.M. Anastassakis and J.D. Joannopoulos (World Pub. Co., Singapore, 1990); p. 1121

65) Electroreflectance and Photoluminescence Study of the Effect of Hydrogen on Heavily Doped GaAs/GaAlAs Structures
D. Yang, J.W. Garland, P.M. Raccah, C. Coluzza, P. Frankl, M. Capizzi, F. Chambers, and C. Devane
Appl. Phys. Lett. 57, 2829 (1990)

67) Picosecond Spectroscopy of Hydrogenated MBE-GaAs
M. Capizzi, C. Coluzza, P. Frankl, A. Frova M. Colocci, M. Gurioli, A. Vinattieri, and R.N. Sacks
Physica B 170, 561 (1991)

68) Electroreflectance and Photoluminescence Study of the Effect of Hydrogen on Heavily Doped GaAs/GaAlAs Structures
D. Yang, J.W. Garland, P.M. Raccah, C. Coluzza, P. Frankl, M. Capizzi, F. Chambers, and C. Devane
Physica B 170, 557 (1991)

70) Luminescence Study of RF-Sputtered CdS Films
A. Bennouna, E.L. Ameziane, M. Capizzi, and C. Coluzza
Solar Energy Mat. 22, 195 (1991)

71) Structural and Vibrational Properties of the Si-H-Al Complex in Crystalline Silicon
A. Amore Bonapasta, P. Giannozzi, and M. Capizzi
Phys. Rev. B 44, 3399 (1991)

72) Reorientation of the B-H Complex in Silicon by Anelastic Relaxation Experiments
G. Cannelli, R. Cantelli, M. Capizzi, C. Coluzza, F. Cordero, A. Frova, and A. Lo Presi
Phys. Rev. B 44, 11486 (1991)

74) Shallow and Deep Radiative Levels of H Complexes in GaAs
M. Capizzi, C. Coluzza, V. Emiliani, P. Frankl, A. Frova, and F. Sarto
Material Science Forum 83-87, 599 (1992)

75) Elastic Energy Loss Due to the Reorientation of H around B in Silicon
G. Cannelli, R. Cantelli, M. Capizzi, F. Cordero, A. Frova, M. Stutzmann, and F. Trequattrini
Material Science Forum 83-87, 9 (1992)

77) Internally Detected Electron Photoexcitation Spectroscopy on Heterostructures
C. Coluzza, A. Neglia, A. Bennouna, M. Capizzi, R. Carluccio, A. Frova, and P.C. Srivastava
Appl. Surf. Science 56-58, 733 (1992)

78) Silicon-hydrogen-acceptor Complexes in Crystalline Silicon
A. Amore Bonapasta, P. Giannozzi, and M. Capizzi
Phys. Rev. B 45, 11744 (1992)

79) Hydrogen Passivation of Interface Defects in GaAs/AlAs Short-period Superlattices
R. Fischer, G. Peter, E.O. Goebel, M. Capizzi, A. Frova, A. Fischer, and K. Ploog
Appl. Phys. Lett. 60, 2788 (1992)

80) Hydrogen Activated Radiative States in GaAs/GaAlAs Heterostructures and InGaAs/GaAs Multiquantum Wells
M. Capizzi, C. Coluzza, V. Emiliani, P. Frankl, A. Frova, F. Sarto, and A. Amore Bonapasta
J. Appl. Phys. 72, 1454 (1992)

82) Effect of Ion-gun Hydrogenation on the Photoluminescence of Degenerate n-type GaAs Si
M. Capizzi, V. Emiliani, A. Frova, and F. Sarto
Phys. Rev. B 47, 4301 (1993)

86) Hydrogen-donor-induced Free Exciton Splitting in GaAs
M. Capizzi, V. Emiliani, A. Frova, F. Sarto, and R.N. Sacks
Phys. Rev. B 47, 12563 (1993)

88) Quenching of Excitonic Lines in GaAs Due to Deuterium Accumulation at the Epilayer/Substrate Interface
F. Sarto, M. Capizzi, and A. Frova
Semicond. Sci. and Technol. 8, 1231 (1993)

89) Effect of Hydrogen on Hot Electron Noise in Short Samples of GaAs
V. Bareikis, J. Liberis, A. Matulionis, P. Sakalas, and M. Capizzi
Semicond. Sci. and Technol. 8, 1829 (1993)

95) Giant Photoluminescence Enhancement in Deuterated Highly Strained InAs\GaAs Quantum Wells
A. Polimeni, D. Marangio, M. Capizzi, A. Frova, and F. Martelli
Appl. Phys. Lett. 65, 1254 (1994)

96) Deuterium in InGaAs/GaAs Strained Quantum Wells an Optically Active Impurity
M. Capizzi, A. Polimeni, B. Bonanni, V. Emiliani, A. Frova, D. Marangio, and F. Martelli
Semic. Science and Technol. 9, 2233 (1994)

98) Deuterium in In-Based Quantum Wells
M. Capizzi, A. Frova, D. Marangio, A. Polimeni, and F. Martelli
Superlattices and Microstructures 15, 113 (1994)

101) Photoluminescence of InAs/GaAs Near-monolayer Quantum Wells Before and After Deuterium Irradiation
M. Capizzi, A. Frova, D. Marangio, A. Polimeni, and F. Martelli
Proc. of the 22nd Int. Conf. on the Physics of Semiconductors, XXII ICPS, Vancouver, Canada, August 14-19, edited by David J. Lockwood (World Scientific, NJ, 1995), p. 1149

115) Quantum Diffusion of Deuterium around Substitutional Zn in GaAs
G. Cannelli, R. Cantelli, F. Cordero, E. Giovine, F. Trequattrini, M. Capizzi, and A. Frova
Solid State Commun. 98, 873 (1996)

122) Hopping and Tunnelling of H(D) in Semiconductors
G. Cannelli, R. Cantelli, M. Capizzi, F. Cordero, A. Frova, E. Giovine, and F. Trequattrini
Proceedings of the International Symposium on Metal-Hydrogen Systems ,
Les Diablerets (CH), 25-30 August 1996

138) Near-edge states induced by hydrogen inclusion in gallium arsenide
A. Amore Bonapasta, M. Capizzi, and Paolo Giannozzi
Phys. Stat. Sol. B 210, 277 (1998)

139) Hydrogen Induced States near the GaAs Band-edges
A. Amore Bonapasta, M. Capizzi, and P. Giannozzi
Phys. Rev. B 59, 4869 (1999).

194) Hydrogen Passivation of Isoelectronic Impurities in ZnTeS
M. Bissiri, A. Augieri, A. Polimeni, G. Baldassarri H. v. H., M. Capizzi, I. K. Sou, and W. K. Ge
Proceedings of ICPS XXVI, Edinburgh, 29 July - 2 August 2002, Institute of Physics Conference Series Number 171, edited by A R Long and J D Davies (Institute of Physics Publishing, Bristol, UK, 2003) H46

205) A. Polimeni, M. Capizzi , Y. Nabetani, Y. Ito, T. Okuno, T. Kato, T. Matsumoto, and T. Hirai
Temperature dependence and bowing of the band gap in ZnSe1-xOx
Appl. Phys. Letters 84, 3304 (2004).

209) M. Felici, V. Cesari, A. Polimeni, A. Frova, M. Capizzi, Yong Dae Choi, Byungsung O, Young-Moon Yu, Y. Nabetani, Y. Ito, T. Okuno, T. Kato, T. Matsumoto, T. Hirai, I. K. Sou, and W. K. Ge Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic oxygen impurities
IEE Proc.-Optoelectron. 151, 465-468 (2004)

223) M. Felici, A. Polimeni, M. Capizzi, Y. Nabetani, T. Okuno, K. Aoki, T. Kato, T. Matsumoto, and T. Hirai
Passivation of an isoelectronic impurity by atomic hydrogen The case of ZnTeO
Appl. Phys. Lett. 88, 101910 (2006).

238) M. Felici, A. Polimeni, A. Scordo, F. Masia, A. Frova, M. Capizzi, Y. Nabetani,
T. Okuno, K. Aoki, T. Kato, T. Matsumoto, and T. Hirai
Influence of the host lattice on the O-H interaction in II-VI semiconductors
Proceedings of the 28th International Conference on the Physics of Semiconductors (Vienna, Austria, July 24th-28th, 2006), edited by W. Jantsch and F. Schaffler (American Institute of Physics) pp. 327-328

High Critical Temperature Superconductors

47) Observation of Nearly Drude Behavior and a Weak Energy Gap Structure in Single Crystal BaYCuO G.A. Thomas, M. Capizzi, J. Orenstein, D.H. Rapkine, L.F. Schneemeyer, J.V. Waszczak, A. Millis, and R.N. Bhatt
Jap. J. Appl. Phys. 26, 2044 (1987)

50) BaYCuO Electrodynamics of Crystals with High Reflectivity
G.A. Thomas, J. Orenstein, D.H. Rapkine, M. Capizzi, A. Millis, R.N. Bhatt, L.F. Schneemeyer, and J.V. Waszczak
Phys. Rev. Letters 61, 1313 (1988)

53) The Energy Gap and Two-Component Absorption in a High Tc Superconductor
G.A. Thomas, M. Capizzi, J. Orenstein, D.H. Rapkine, A. Millis, P. Gammel, L.F. Schneemeyer, and J.V. Waszczak
in High Tc Superconductors Electronic Structure ed. A. Bianconi (Pergamon Press, Oxford, 1989); p. 67

54) Variations in the Far-Infrared Reflectivity of BaYCuO
G.A. Thomas, M. Capizzi, T. Timusk, S.L. Cooper, J. Orenstein, D.H. Rapkine, S. Martin, L.F. Schneemeyer, and J.V. Waszczak
J. of Opt. Soc. of America B 6, 415 (1989)

55) Properties of Optical Features in YBaCuO
S.L. Cooper, G.A. Thomas, J. Orenstein, D.H. Rapkine, M. Capizzi, T. Timusk, A.J. Millis, L.F. Schneemeyer, and J.V. Waszczak
Phys. Rev. B 40, 11358 (1989)

59) Infrared Reflectivity of Bi-Sr-Ca-Cu-O High-Tc Superconductors
P. Calvani, M. Capizzi, S. Lupi, P. Maselli, D. Peschiaroli, and H. Katayama-Yoshida
Solid State Commun. 74, 1333 (1990)

60) Bi2Sr2CanCun+1O2n+6 Optical Conductivity P. Calvani, M. Capizzi, A. Fabrizi, M. Grilli, S. Lupi, P. Maselli, D. Peschiaroli, A. Pompa, and H. Katayama-Yoshida
High Temperature Superconductivity, Proceedings of SATT3, edited by C. Ferdeghini and A. S. Siri (World Pub. Co., Singapore, 1990); p. 170

66) Normal State Reflectance of NdCeCuO Syngle Crystals
P. Calvani, M. Capizzi, S. Lupi, P. Maselli, M. Virgilio, A. Fabrizi, and M. Pompa
J. of Less-Common Metals 164&165, 776 (1990)

69) High Tc Superconducting Thin Film An Analysis of Reflectance Spectra
P. Calvani, M. Capizzi, S. Lupi, P. Maselli, and E. Agostinelli
Physica C 180, 116 (1991)

73) Infrared Optical Properties of Perovskite Substrates for High Tc Superconducting Films
P. Calvani, M. Capizzi, F. Donato, P. Dore, S. Lupi, P. Maselli, and C.P. Varsamis
Physica C 181, 289, (1991)

76) Infrared Optical Conductivity of the Nd-Ce-Cu-O System
S. Lupi, P. Calvani, M. Capizzi, P. Maselli, W. Sadowski, and E. Walker
Phys. Rev. B 45, 12470 (1992)

83) Far-infrared and Mid-infrared Absorption in (Bi,Pb)-Sr-(Ca,Y)-Cu-O
P. Calvani, M. Capizzi, P. Dore, S. Lupi, P. Maselli, G. Paleologo, G. Balestrino, M. Marinelli, E. Milani, H. Berger, P. Roy, and Y.-L. Mathis
Int. J. Infr. and Millim. Waves 14, 251 (1993)

85) Observation of a Midinfrared Band in Reduced Strontium Titanate
P. Calvani, M. Capizzi, F. Donato, S. Lupi, P. Maselli, and D. Peschiaroli
Phys. Rev. B 47, 8917 (1993)

94) Polaron Imprints in the infrared spectra of Nd2CuO4-y
P. Calvani, M. Capizzi, S. Lupi, P. Maselli, A. Paolone, P. Roy, S-W. Cheong, W. Sadowski, and E. Walker
Solid State Commun. 91, 113 (1994)

97) Optical Evidence of Polarons in Superconducting Cuprates
M. Capizzi, P. Calvani, S. Lupi, P. Maselli, A. Paolone, P. Roy, H. Berger, and G. Balestrino
Physica C 235-240, 273 (1994)

99) Polaron Formation in Superconducting Cuprates Evidence from the Infrared Reflectivity
S. Lupi, P. Roy, P. Calvani, M. Capizzi, P. Maselli, A. Paolone, G. Balestrino, S-W. Cheong, and W. Sadowski
Il Nuovo Cimento 16D, 1735 (1994)

100) Polaron Bands in the Far- and Mid-Infrared Spectra of e-doped Cuprates
P. Calvani, S. Lupi, P. Roy, M. Capizzi, P. Maselli, A. Paolone, W. Sadowski, and S-W. Cheong
in Polarons and Bipolarons in High-Tc Superconductors, ed. by E.K.H. Salje, A.S. Alexandrov, and W.Y. Liang (Cambridge Univ. Press, 1995); p. 155

103) P. Calvani, M. Capizzi, S. Lupi, P. Maselli, A. Paolone, P. Roy, and H. Berger
Optical Detection of Polarons in High-Tc Cuprates
in Anharmonic Properties of High-Tc Cuprates , Eds. D. Mihailovic, G. Ruani, E. Kaldis, and K.A. Muller (World Scientific, Singapore, 1995), pp. 139-147

106) Optical Evidence of Polarons in Superconducting Cuprates
P. Calvani, M. Capizzi, S. Lupi, P. Maselli, A. Paolone, and B. Ruzicka
Fourth Euro Ceramics, June 15 (1995), High Tc superconductors, edited by A. Barone, D. Fiorani, and A. Tampieri

107) Infrared Active Vibrational Modes Strongly Coupled to Carriers in High-Tc Superconductors
P. Calvani, M. Capizzi, S. Lupi, and G. Balestrino
Europhysics Letters 31, 473 (1995)

112) Polaronic Optical Absorption in Electron-doped and Hole-doped Cuprates P. Calvani, M. Capizzi, S. Lupi, P. Maselli, A. Paolone, and P. Roy

Phys. Rev. B 53, 2756 (1996)

117) Polarons in the Infrared Spectra of High Tc Materials
B. Ruzicka, P. Calvani, M. Capizzi, S. Lupi, P. Maselli, and A. Paolone
J. of Superconductivity 9, 393 (1996)

118) Polaronic Optical Absorption in Semiconducting and Superconducting Oxides
P. Calvani, M. Capizzi, S. Lupi, P. Maselli, and B. Ruzicka
Proceedings of the 21st International Conference on Low Temperature Physics,
Prague, August 8-14, 1996; Czechoslovak Journal of Physics 46 S3, 1247 (1996)

120) Weakly and Tightly Bound Polarons in the Infrared spectra of Perovskites M. Capizzi, P. Calvani, P. Dore, S. Lupi, P. Maselli, A. Paolone B. Ruzicka, W. Sadowski, and S.-W. Cheong
Physica Scripta T66, 215 (1996)

130) Fano effect in the a-b plane of Nd1.96Ce0.04CuO4-y evidence of phonon interaction with a polaronic background
S. Lupi, M. Capizzi, P. Calvani, B. Ruzicka, P. Maselli, P. Dore, and A. Paolone
Phys. Rev. B 57, 1248 (1998)

131) Low-temperature Softening of the Polaron Band in Electron-doped Cuprates
B. Ruzicka, S. Lupi, P. Calvani, M. Capizzi, and P. Maselli
Physica B 244, 41 (1998)

137) Comment on Optical Properties of NdCeCuO4
P. Calvani, M. Capizzi, and S. Lupi
Phys. Rev. 58, 14 621 (1998)

140) Polaron Absorption and the Insulator to Metal Transition in Nd2-xCexCuO4-y Cuprates
S. Lupi, P. Giura, P. Calvani, M. Capizzi, P. Roy, P. Maselli, and V. Raimondi
J. of Superconductivity 12, 69 (1999)

142) Polaron softening with doping and temperature in high-Tc cuprates
P. Giura, S. Lupi, P. Calvani, P. Roy, M. Capizzi, P. Maselli, and V. Raimondi
Physica B 259-261, 548 (1999)

147) Evolution of a Polaron Band through the Phase Diagram of
Nd2-xCexCuO4-y
S. Lupi, P. Maselli, M. Capizzi, P. Calvani, P. Giura, and P. Roy
Phys. Rev. Letters 83, 4852 (1999)

153) Evidence of two species of carriers from the far-infrared reflectivity of Bi2Sr2CuO6
S. Lupi, P. Calvani, M. Capizzi, and P. Roy
Phys. Rev. B 62, 12418 (2000)

154) Infrared Evidence for the Cohexistence of Free and Bound Charges
in Nd2-xCexCuO4 and Bi2Sr2CuO6
S. Lupi, P. Calvani, M. Capizzi, P. Maselli, P. Giura, and P. Roy
International Journal of Modern Physics B 14, 3548 (2000)

179) Phase diagram of La2-xSrxCuO4 probed in the infrared Imprints of charge stripe excitations
A. Lucarelli, S. Lupi, M. Ortolani, P. Calvani, P. Maselli, M. Capizzi, P. Giura, H. Eisaki, N. Kikugawa, T. (30 citazioni al 2005)
Fujita, M. Fujita, and K. Yamada
Phys. Rev. Letters 90, 037002 (2003).

197) A. Lucarelli, S. Lupi, M. Ortolani, P. Calvani, P. Maselli, and M. Capizzi
Reply to S. Tajima et al. comment
Phys. Rev. Letters 91, 129702 (2003).

208) Michele Ortolani, Stefano Lupi, Andrea Lucarelli, Paolo Calvani, Angelo Perla, Paola Maselli, Mario Capizzi, Naoki Kikugawa, and Toshizo Fujita
Imprints of charge stripe excitations in the infrared conductivity of La2-xSrxCuO
Physica C 408-410, 439-440 (2004).

Deep Levels in Semiconductors

81) Optical Emission Study of the Energy Levels of Ga-vacancy/Hydrogen Complexes in n- and p-type GaAs
A. Amore Bonapasta, B. Bonanni, M. Capizzi, L. Cherubini, V. Emiliani, A. Frova, and F. Sarto
Mat. Res. Soc. Symp. Proc. 262, 467 (1992)

84) The Spectrum of Energy Levels of the Ga-vacancy/deuterium Complexes in p-GaAs
A. Amore Bonapasta, B. Bonanni, M. Capizzi, L. Cherubini, V. Emiliani, A. Frova, R.N. Sacks, and F. Sarto
J. Appl. Phys. 73, 3326 (1993)

108) Theory of Hydrogen Decorated Gallium Vacancy in GaAs
A. Amore Bonapasta and M. Capizzi
Phys. Rev. B 52, 11044 (1995)

129) Structure and Reorientation of the SiAs-H and ZnGa-H Complexes in Gallium Arsenide
A. Amore Bonapasta, Paolo Giannozzi, and M. Capizzi
Material Science Forum 258-263, 855 (1997)

132) Hydrogen as a Deep Impurity in Semiconductors and its Interaction with Deep Centers in III-V Compounds
A. Amore Bonapasta and M. Capizzi
Defect and Diffusion Forum 157-159, 133 (1998)

134) Structure, Kinetics and Passivation of Hydrogen-acceptor Complexes in Gallium Arsenide a Theoretical Study
A. Amore Bonapasta, M. Capizzi, and Paolo Giannozzi
Phys. Rev. B 57, 12 923 (1998)

148) Structure, Kinetics and Vibrational Properties of Complexes Formed by Hydrogen and Gallium Vacancies in GaAs a Theoretical Study
A. Amore Bonapasta and M. Capizzi
Phys. Rev. B 61, 8180 (2000)

Low Dimensional Systems: Quantum Wells

87) Exciton Confinement in GaAs Quantum Barriers
F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M.R. Bruni, and M.G. Simeone
Phys. Rev. B 48, 1643 (1993)

90) Exciton Modes in Quantum Barriers
F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M.R. Bruni, and M.G. Simeone
SPIE 1985, 376 (1993)

91) Near-surface QWs in GaAs Recovery of Emission Efficiency Via Surface Passivation by Hydrogen and Stability Effects
A. Frova, V. Emiliani, M. Capizzi, B. Bonanni, Y.-L. Chang, Y.-H. Zhang, and J.L. Merz
SPIE 1985, 601 (1993)

92) Above Barrier Exciton Confinement in InGaAs/GaAs Multiple-Quantum-Well Structures
M. Capizzi, A. Polimeni, A. Frova, F. Martelli, K.B. Ozanyan, T. Worren, M.R. Bruni, and M.G. Simeone
Solid State Electron. 37, 641 (1994)

93) Interaction Mechanisms of Near-Surface Quantum Wells with Oxidized and H-Passivated AlGaAs Surfaces
B. Bonanni, M. Capizzi, V. Emiliani, A. Frova, C. Presilla, M. Colocci, M. Gurioli, Y-L. Chang, I-H. Tan, and J. L. Merz
J. Appl. Phys. 75, 5114 (1994)

102) Transient Tunneling Currents in Near-surface Quantum Wells
B. Bonanni, M. Capizzi, R. Dioletta, V. Emiliani, A. Frova, C. Presilla, M. Colocci, M. Gurioli, A. Vinattieri, F. Martelli, Y.-L. Chang, J.L. Merz, and S.-S. Stone
Proc. of the 22nd Int. Conf. on the Physics of Semiconductors, XXII ICPS, Vancouver, Canada, August 14-19, edited by David J. Lockwood (World Scientific, NJ, 1995), p. 1043

104) Tunneling and Relaxation of Photogenerated Carriers in Near-surface Quantum Wells
V. Emiliani, B. Bonanni, A. Frova, M. Capizzi, F. Martelli, and S.-S. Stone
J. Appl. Phys. 77, 5712 (1995)

105) Linewidth Analysis of the Photoluminescence of InxGa1-xAs/GaAs Quantum Wells (x = 0.09, 0.18, 1.0)
A. Patane', A. Polimeni, M. Capizzi, and F. Martelli
Phys. Rev. B 52, 2784 (1995)

109) Excitation Energy Dependence of the Optical Properties of InGaAs/GaAs Quantum Well Heterostructures
P. Borri, M. Gurioli, M. Colocci, F. Martelli, A. Polimeni, A. Patane', and M. Capizzi
Il Nuovo Cimento 17, 1383 (1995)

111) InGaAs/GaAs Quantum Wells a Standard Photoluminescence System? M. Capizzi, F. Martelli, and A. Polimeni
Annales de Physique 20, C2-183 (1995)

114) Excitation Localization by Potential Fluctuations at the Interface of InGaAs/GaAs Quantum Wells
F. Martelli, A. Polimeni, A. Patane', M. Capizzi, P. Borri, M. Gurioli, M. Colocci, A. Bosacchi, and S. Franchi
Phys. Rev. B 53, 7421 (1996)

116) Photoinduced Structures in the Exciton Luminescence Spectrum of InGaAs/GaAs Quantum Well Heterostructures
P. Borri, M. Gurioli, M. Colocci, F. Martelli, M. Capizzi, A. Patane', and A. Polimeni
J. Appl. Phys. 80, 3011 (1996)

121) Stokes Shift in Quantum Wells Trapping vs Thermalization A. Polimeni, A. Patane', M. Grassi Alessi, M. Capizzi, F. Martelli, A. Bosacchi, and S. Franchi
Phys. Rev. B 54, 16 389 (1996)
124) Binding Energy and Lifetime of Excitons in InGaAs/GaAs Quantum Wells
D. Orani, A. Polimeni, A. Patane', M. Capizzi, F. Martelli, A. D'Andrea, N. Tomassini, P. Borri, M. Gurioli, and M. Colocci
Phys. Stat. Sol. A 164, 107 (1997)

125) Carrier Transfer between InGaAs/GaAs Quantum Wells Separated by Thick Barriers
P. Borri, M. Gurioli, M. Colocci, A. Patane', M. Grassi Alessi, M. Capizzi, and F. Martelli
Phys. Stat. Sol. A 164, 227 (1997)

127) Phonon-Assisted Modulation of the Electron Collection Efficiency into InGaAs/GaAs Quantum Wells
P. Borri, M. Gurioli, M. Colocci, F. Martelli, and M. Capizzi
Phys. Stat. Sol. B 164, 201 (1997)

128) Competition Effects in the Carrier Capture into InGaAs/GaAs Quantum Wells P. Borri, M. Gurioli, M. Colocci, F. Martelli, and M. Capizzi
Phys. Rev. B 56, 9228 (1997)

145) Charged excitonic complexes in GaAs/AlGaAs p-i-n double quantum wells
V.B. Timofeev, A.V. Larionov, M. Grassi Alessi, M. Capizzi, A. Frova, and J.M. Hvam
Phys. Rev. B 60, 8897 (1999)

146) Excitation Transfer through Thick Barriers in Asymmetric Double Quantum Well Structures
P. Borri, M. Gurioli, M. Colocci, A. Patane, M. Grassi Alessi, M. Capizzi, and F. Martelli
Physica E 5, 73 (1999)

149) Phase Diagram of a 2D Liquid in GaAs/AlGaAs Biased Double Quantum Wells
V.B. Timofeev, A.V. Larionov, M. Grassi Alessi, M. Capizzi, and J.M. Hvam
Phys. Rev. B 61, 8420 (2000)

150) Competition between Carrier Thermalization and Potential Well Disorder in Strained InGaAs/GaAs Quantum Wells
M. Grassi Alessi, F. Fragano, A. Patane', M. Capizzi, E. Runge, and R. Zimmermann
Phys. Rev. B 61, 10985 (2000)

Low Dimensional Systems: Quantum Dots

110) Photoluminescence of InAs/GaAs Quantum Dots
A. Polimeni, A. Patane', M. Capizzi, and F. Martelli
in Highlights of Light Spectroscopy on Semiconductors
Frascati, September 11-12, 1995

113) Self-aggregation of Quantum Dots for Very Thin InAs Layers on GaAs
A. Polimeni, A. Patane', M. Capizzi, F. Martelli, L. Nasi, and G. Salviati
Phys. Rev. B 53, R4213 (1996)

119) Absence of a Critical Thickness for the Self-Aggregation of Quantum Dots in InAs/GaAs Quantum Wells
A. Patane', A. Polimeni, M. Capizzi, F. Martelli, L. Lazzarini, G. Salviati, and L. Nasi
Proc. of the 23nd Int. Conf. on the Physics of Semiconductors, XXIII ICPS, Berlin, Germany, July 21-26, 1996, edited by M. Scheffler and R. Zimmermann (World
Scientific, Singapore, 1997); p. 1305

126) Evolution of the Optical Properties of InAs/GaAs Quantum Dots for Increasing Indium Coverages
A. Patane', M. Grassi Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, M. Geddo, A. Bosacchi, and S. Franchi
Phys. Stat. Sol. A 164, 493 (1997)

133) Self-aggregated InAs Quantum Dots in GaAs
A. Patane', M. Grassi Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, L. Nasi, L. Lazzarini, G. Salviati, A. Bosacchi, and S. Franchi
J. Appl. Phys. 83, 5529 (1998)

135) InGaAs/GaAs interfaces from 2D-islands to quantum dots
M. Capizzi, A. Frova, M. Grassi Alessi, A. Patane', A. Polimeni and F. Martelli
Nuovo Cimento 20 D, 915 (1998)

136) Photoreflectance Study of InAs Growth Mode in InAs/GaAs Quasi-0D Systems
M. Geddo, M. Capizzi, A. Patane, and F. Martelli
J. Appl. Phys. 84, 3374 (1998)

141) Optical Properties of InAs Quantum Dots Common Trends
M. Grassi Alessi, M. Capizzi, A. Bhatti, A. Frova, F. Martelli, P. Frigeri, A. Bosacchi, and S. Franchi
Phys. Rev. B 59, 7620 (1999)

143) Optical Spectroscopy of Quasi-monolayer InAs at the Onset Of Quantum Dot Nucleation
A. S. Bhatti, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi
Phys. Rev. B 60, 2592 (1999)

144) Carrier thermal escape and retrapping in self assembled quantum dots
S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi
Phys. Rev. B 60, 8276 (1999)

151) Optical Evidence of Polaron Interaction in InAs/GaAs Quantum Dots M. Bissiri, G. Baldassarri Höger von Högersthal, A.S. Bhatti, M. Capizzi, A. Frova, P. Frigeri, and S. Franchi
Phys. Rev. B 62, 4642 (2000)

155) Polaron Interaction in InAs/GaAs Quantum Dots and Resonant Photoluminescence
M. Bissiri, G. Baldassarri H. v. H., M. Capizzi, V. M. Fomin, V. N. Gladilin, and
J. T. Devreese
phys. stat. sol. (b) 224, 639-642 (2001)

158) Atomic Equilibrium Concentrations in (InGa)As Quantum Dots
M. Galluppi, A. Frova, M. Capizzi, F. Boscherini, P. Frigeri, S. Franchi, and A. Passaseo
Appl. Phys. Lett. 78, 3121-3123 (2001)

161) Polaron interaction and local modes in quantum dots
G. Baldassarri H.v.H., M. Bissiri, A.S. Bhatti, M. Capizzi, S. Franchi, P. Frigeri, and A. Frova
Proc. of the 25th Int. Conf. on the Physics of Semiconductors, XXV ICPS, Osaka, Japan, 17-22 September, 2000, edited by N. Miura and T. Ando, (Springer, Berlin, 2001); pp. 1193-1194

162) Equilibrium Indium Concentration in MBE and MOCVD (InGa)As Quantum Dots
M. Galluppi, M. Capizzi, F. Boscherini, M. Catalano, A. Passaseo, R. Cingolani, P. Frigeri, and S. Franchi
Proc. of the 25th Int. Conf. on the Physics of Semiconductors, XXV ICPS, Osaka, Japan, 17-22 September, 2000, edited by N. Miura and T. Ando, (Springer, Berlin, 2001); pp. 1199-1200

163) Polarised Luminescence from Coupled and Uncoupled InAs Stacked Quantum Dots
Fakhar-ul-Inam, A. S. Bhatti, E. La Rosa, M. Capizzi, A. Frova, P. Frigeri, and S. Franchi
Proc. of the 25th Int. Conf. on the Physics of Semiconductors, XXV ICPS, Osaka, Japan, 17-22 September, 2000, edited by N. Miura and T. Ando, (Springer, Berlin, 2001); pp. 1321-1322

168) Quantum size and shape effects on the excited states of InGaAs quantum dots
M. Bissiri, G. Baldassarri Höger von Högersthal, M. Capizzi, P. Frigeri, and S. Franchi
Phys. Rev. B 64, 245337-1/245337-8 (2001)

187) Emission energy and polarization tuning of InAs/GaAs Self-Assembled Dots by Growth Interruption
D. Ochoa, A. Polimeni, M. Capizzi, A. Patané, M. Henini, L. Eaves, P. C. Main
J. Cryst. Growth 251, 192-195 (2003).

201) Hydrogenation of strain engineered InAs/InxGa1-xAs quantum dots
D. Ochoa, A. Polimeni, M. Capizzi, A. Frova, L. Seravalli, M. Minelli, P. Frigeri, and S. Franchi
phys. stat. sol. (c) 1, 581-584 (2004).

215) S. Mazzucato, D. Nardin, A. Polimeni, M. Capizzi, D. Granados, and J. M. García
Hydrogenation of Stacked Self-Assembled InAs/GaAs Quantum Dots
Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff 26-30 July, 2004, American Institute of Physics (AIP). Editors J. Menéndez and C.G. Van de Walle; p. 621.

218) S. Mazzucato, D. Nardin, M. Capizzi, A. Polimeni, A. Frova, L. Seravalli, and S. Franchi
Defect passivation in strain engineered InAs/(InGa)As quantum dots
Materials Science and Engineering C 25, 830 (2005).

257) S. Sanguinetti, M. Guzzi, E. Grilli, M. Gurioli, L. seravalli, P. Frigeri, S. Franchi, M. Capizzi, S. Mazzucato, and A. Polimeni
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots
Phys. Rev. B 78, 085313-1/ 085313-6 (2008).

Dilute nitride and InGaN alloys

169) Nitrogen related complexes in Ga(AsN) and their interaction with hydrogen M. Bissiri, V. Gaspari, G. Baldassarri Höger von Högersthal, F. Ranalli, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel phys. stat. sol. (a) 190, 651-654 (2002).

170) Reversibility of the effects of hydrogen on the electronic properties of InxGa1-xAs1-yNy G. Baldassarri Höger von Högersthal, M. Bissiri, F. Ranalli, V. Gaspari, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel Physica E 13, 1082-1085 (2002).

171) Hydrogen induced passivation of nitrogen in Ga (AsN) M. Bissiri, G. Baldassarri Höger von Högersthal, A. Polimeni, V. Gaspari, F. Ranalli, M. Capizzi, A. Amore Bonapasta, F. Jiang, M. Stavola, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel Phys. Rev. B 65, 235210 (2002)

172) Reduced temperature dependence of the band gap in Ga(AsN) investigated with photoluminescence A. Polimeni, M. Bissiri, A. Augieri, G. Baldassarri Höger von Högersthal, M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, A. Forchel Phys. Rev. B 65, 235325 (2002)

173) Role of hydrogen in III-N-V compound semiconductors A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel Semic. Science & Technol. 17, 797-802 (2002).

174) Role of N clusters in the InGaAsN band gap reduction M. Bissiri, G. Baldassarri Höger von Högersthal, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel Phys. Rev. B 66, 033311 (2002). 175) Photoluminescence and Infrared Absorption Study of Isoelectronic Impurity Passivation by Hydrogen M. Capizzi, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Amore Bonapasta, F. Jiang, M. Stavola, M. Fischer, A. Forchel, I. K. Sou, and W. K. Ge Mat. Res. Soc. Symp. Proc. 719, 251-256 (2002).

176) Structure and passivation effects of mono- and di-hydrogen complexes in GaAsyN1-y alloys A. Amore Bonapasta, F. Filippone, P. Giannozzi, M. Capizzi, and A. Polimeni Phys. Rev. Letters 89, 216401 (2002).

177) Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures M.Geddo, R. Pezzuto, M. Capizzi, A. Polimeni D. Gollub, M. Fischer, and A. Forchel Eur. Phys. Jour. B 30, 39 (2002).

178) Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures M. Geddo, G. Guizzetti, R. Pezzuto, A. Polimeni, M. Capizzi, M. Bissiri, G. Baldassarri H. v H., D. Gollub, and A. Forchel Mater. Res. Soc. Symposium Proceedings 744, 531-536 (2003)

180) Atomic ordering in (InGa)(AsN) quantum wells An In K-edge X-ray absortpion investigation G. Ciatto, F. Boscherini, F. D'Acapito, S. Mobilio, G. Baldassarri H. v. H., A. Polimeni, M. Capizzi, D. Gollub, and A. Forchel Nuclear Instruments and Methods in Physics Research B, 200, 34-39 (2003)

181) Exciton Dynamics in InGaAsN/GaAs heterostructures A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M.Fischer, and A. Forchel phys. stat. sol. (a) 195, 558-562 (2003).

182) Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GasAs heterostructures A. Polimeni, M. Bissiri, G. Baldassarri Höger von Högersthal, M. Capizzi, D. Giubertoni, M. Barozzi, M. Bersani, D. Gollub, M. Fischer, and A. Forchel Solid State Electronics 47, 447-453 (2003).

183) Global changes of the bandstructure and the crystal lattice of Ga(N,As) due to hydrogenation P.J. Klar, H. Grüning, M. Güngerich, W. Heimbrodt, J. Koch, T. Torunski, W. Stolz, A. Polimeni, and M. Capizzi Phys. Rev. B 67, 121206 (R) (2003).

184) Role of the host matrix in the carrier recombination of InGaAsN alloys A.Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, A.Forchel Appl. Phys. Letters 82, 2805-2807 (2003)

185) InGaAs quantum dots excited states as determined by microphotoluminescence and resonant photoluminescence M. Bissiri, G. Baldassarri Hoeger von Hoegersthal, D. Ochoa, M. Capizzi, P. Frigeri, and S. Franchi phys. stat. sol. (b) 237, 301-307 (2003).

186) Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures P. J. Klar, H. Grüning, L. Chen, Th. Hartmann, D. Golde, M. Güngerich, W. Heimbrodt, J. Koch, K. Volz, B. Kunert, T. Torunski, W. Stolz, A. Polimeni, M. Capizzi, S. Tomic, A. Lindsay, E.P. O'Reilly, Gh. Dumitras, L. Geelhaar, and H. Riechert IEE P-Optoelectron 150, 28-35 (2003).

188) Nitrogen passivation induced by atomic hydrogen the GaPN case A. Polimeni, M. Bissiri, M. Felici, M. Capizzi, I.A. Buyanova, W.M. Chen, H. P. Xin, and C.W. Tu Phys. Rev. B 67, 201303(R) (2003).

189) Hydrogen induced improvements in optical quality of GaNAs alloys I.A. Buyanova, M. Izafard, W.M. Chen, A. Polimeni, M. Capizzi, H. P. Xin, and C.W. Tu Appl. Phys. Lett. 82, 3662 (2003).

190) Magneto-photoluminescence studies in (InGa)(AsN)/GaAs heterostructures G. Baldassarri Höger von Högersthal, A. Polimeni, F. Masia, M. Bissiri, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel Phys. Rev. B 67, 233304 1-4 (2003)

191) Early manifestation of localization effects in highly diluted Ga(AsN) F. Masia, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, P. J. Klar, and W. (21 citazioni al 2005) Stoltz Appl. Phys. Letters 82, 4474-4476 (2003)

192) Hydrogen-nitrogen Complexes in GaAsN Alloys the Role of Doping in the Formation of Mono- and Di-hydrogen Complexes A. Amore Bonapasta, F. Filippone, P. Giannozzi, M. Capizzi, and A. Polimeni Proceedings of ICPS XXVI, Edinburgh, 29 July - 2 August 2002, Institute of Physics Conference Series Number 171, edited by A R Long and J D Davies (Institute of Physics Publishing, Bristol, UK, 2003) P62

193) Hydrogen as a Probe of the Electronic Properties of InGaAsN G. Baldassarri H. v. H., M. Bissiri, M. Capizzi, A. Frova, A. Polimeni, A. Amore Bonapasta, F. Jiang, M. Stavola, D. Giubertoni, M. Barozzi, M. Bersani, D. Gollub, M. Fischer, and A. Forchel Proceedings of ICPS XXVI, Edinburgh, 29 July - 2 August 2002, Institute of Physics Conference Series Number 171, edited by A R Long and J D Davies (Institute of Physics Publishing, Bristol, UK, 2003) G1.4

195) Photoreflectance evidence of the N-induced increase of the exciton binding energy in (InGa)(AsN) alloy M.Geddo, G. Guizzetti, M. Capizzi, A. Polimeni, D. Gollub, M. Fischer, and A. Forchel Appl. Phys. Lett. 83, 470 (2003).

196) Lattice relaxation by atomic hydrogen irradiation of InGaAsN/GaAs semiconductor alloys A. Polimeni, G. Ciatto, L. Ortega, F. Jiang, F. Boscherini, F. Filippone, A. Amore Bonapasta, M. Stavola, and M. Capizzi Phys. Rev. B 68, 085204 1-5 (2003).

198) Hydrogen related effects in diluted nitrides A. Polimeni, F. Masia, M. Felici, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Frova, M. Capizzi, P. J. Klar, W. Stolz, I. A. Buyanova, W. M. Chen , H.P. Xin, and C. W. Tu Physica B 340-342, 371-376 (2003). 199) Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs1-xNx A. Polimeni, G. Baldassarri Höger von Högersthal, F. Masia,, M. Capizzi, A. Frova, Simone Sanna, Vincenzo Fiorentini, P. J. Klar, W. Stolz Phys. Rev. B 69, 041201 (R) (2004)

200) Vibrational spectroscopy of hydrogenated GaAs1-yNy A structure-sensitive test of an H2*(N) mode Fan Jiang , Michael Stavola, M. Capizzi, A. Polimeni, A. Amore Bonapasta, and F. Filippone Phys. Rev. B 69, 041309(R) (2004).

202) Role of hydrogen in improving optical quality of GaNAs alloys M. Izafard, I.A. Buyanova, W.M. Chen, A. Polimeni, M. Capizzi, and C.W. Tu Physica E 20, 313-316 (2004). Proceedings of the 11th International Conference on Narrow Gap Semiconductors held in Buffalo, NY, USA (16–20 June 2003)

203) Tuning of the electron effective mass and exciton wavefunction size in GaAs1-xNx A. Polimeni, G. Baldassarri Höger von Högersthal, F. Masia, M. Capizzi, A. Frova, Simone Sanna, Vincenzo Fiorentini, P. J. Klar, and W. Stolz Physica E 21, 747-751 (2004).

204) Single carrier localization in InGaAsN investigated by magneto-photoluminescence A. Polimeni, F. Masia, A. Vinattieri, G. Baldassarri Hoeger von Hoegersthal, and M. Capizzi Appl. Phys. Letters 84, 2295 (2004).

206) Electronic Structure Of GaNP Insights From Optical Studies I. A. Buyanova, W. M. Chen, C. W. Tu, A. Polimeni, and M. Capizzi Proc of the International Symposium at the 204th Annual Meeting of the Electrochemical Society 2003-11, p. 390 (2003); Orlando, FL October 12-October 16, 2003. 207) Magnetophotoluminescence studies of InxGa1-xAs1-yNy A measurement of the electron effective mass, exciton size, and degree of carrier localization A. Polimeni, F. Masia, G. Baldassarri H.v H., and M. Capizzi J. Phys. Condensed Matter 16, S3187-3200 (2004).

210) Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1-x alloys A proof for a general property of dilute nitrides I. A. Buyanova, M. Izadifard, I. G. Ivanov, J. Birch, W. M. Chen, M. Felici, A. Polimeni, M. Capizzi, Y.G. Hong, H. P. Xin, and C. W. Tu Phys. Rev. B 70, 245215 (2004)

211) Free-carrier and/or exciton trapping by nitrogen pairs in GaP1-xNx M. Felici, A. Polimeni, A. Miriametro, M. Capizzi, H.P. Xin, and C. W. Tu Phys. Rev. B 71, 045209 (2005)

212) Comparison between experimental and theoretical determination of the local structure of the GaAsN dilute nitride alloy G. Ciatto, F. d'Acapito, S. Sanna, V. Fiorentini, A. Polimeni, M. Capizzi, and S. Mobilio Phys. Rev. B 71, 115210 (2005)

213) Nitrogen-hydrogen complex in GaAsN revealed by X ray absorption spectroscopy G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni and M. Capizzi Phys. Rev. B 71, 201301(R) (2005).

214) Carrier localization in (InGa)(AsN) alloys A. Polimeni, A. Vinattieri, M. Zamfirescu, F. Masia, and M. Capizzi SPIE 5725, 98-109 (2005). Invited talk at the Symposium Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX Kong-Thon Tsen, Jin-Joo Song, and Hongxing Jiang Chairs/Editors 24-27 January 2005, San Jose, California, USA

216) High Energy Optical Transitions in Ga(PN) Contribution from Perturbed Valence Band M. Felici, A. Polimeni, M. Capizzi, S.V. Dudiy, A. Zunger, I.A. Buyanova, W.M. Chen, H.P. Xin, and C.W. Tu Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff 26-30 July, 2004, American Institute of Physics (AIP). Editors J. Menéndez and C.G. Van de Walle; p.265.

217) Effects of hydrogenation on the local structure of InxGa1-xAs1-yNy quantum wells and GaAs1-yNy epilayers G. Ciatto, H. Renevier, M.G. Proietti, A. Polimeni, M. Capizzi, S. Mobilio, and F. Boscherini Phys. Rev. B 72, 085322-1/085322-8 (2005).

219) Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs) quantum wells K. Hantke, J.D. Heber, S. Chatterjee, P.J. Klar, K. Volz, W. Stolz, W.W. Ruehle, A. Polimeni, and M. Capizzi Appl. Phys. Lett. 87, 252111 (2005).

220) Interaction between conduction band edge and nitrogen states probed by carrier effective mass measurements in GaAs1-xNx F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S.B. Healy, E.P. O’Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz Phys. Rev. B 73, 073201 (2006)

221) Correlation of band formation and local vibrational properties of Ga0.95Al0.05As1-xNx with 0 £ x £ 0.03 M. Güngerich, P. J. Klar, W. Heimbrodt, K. Volz, K. Koehler, J. Wagner, A. Polimeni, M. Capizzi, H. Ch. Alt, and Y. V. Gomenyuk phys. stat. sol. (c) 3, 619-622 (2006).

222) Modification of InN Properties by Interactions with Hydrogen and Nitrogen Maria Losurdo, Maria M. Giangregorio, Giovanni Bruno, Tong-Ho Kim, Pae Wu, Soojeong Choi, Mike Morse, April Brown, Francesco Masia, Antonio Polimeni, and Mario Capizzi Mater. Res. Soc. Symp. Proc. 892, 155-160 (2006) (0892-FF08-03.1-6)

224) Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys I. A. Buyanova, M. Izadifard, T. Seppanen, J. Birch, W. M. Chen, S. J. Pearton, A. Polimeni, M. Capizzi, M. S. Brandt, C. Bihler, Y.G. Hong, and C. W. Tu Physica B 376-377, 568-570 (2006). 23rd International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Japan, 24-29 August, 2005

225) C2v nitrogen-hydrogen complexes in GaAsN revealed by X-ray Absorption Near-Edge Spectroscopy and ab-initio simulations G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, and M. Capizzi ICNS6, Brema, 2005 Phys. stat. sol. (c) 3, 1836-1840 (2006)

226) Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As) J. Teubert, P.J. Klar, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, and M. Capizzi Physica E 32, 218-221 (2006)

227) Compositional disorder in GaAs1-xNxH investigated by photoluminescence M.Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P.J. Klar, and W. Stolz Phys. Rev. B 74, 085203-1/7(2006)

228) Hydrogen-nitrogen complexes in dilute nitride alloys Origin of the compressive lattice strain G. Bisognin, D. De Salvador, E. Napolitani, A.V. Drigo, A. Sambo, M. Berti, A. Polimeni, M. Felici, M. Capizzi, M. Güngerich, P.J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi Appl. Phys. Lett. 89, 061904-1/3 (2006)

230) Nitrogen-induced perturbation of the valence band states in GaPN alloys S.V. Dudiy, Alex Zunger, M. Felici, A. Polimeni, M. Capizzi, H.P. Xin and C.W. Tu Phys. Rev. B 74, 155303-1/6 (2006).

231) Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures M. Gurioli, M. Zamfirescu, A.Vinattieri, S. Sanguinetti, E. Grilli, M.Guzzi, S. Mazzucato, A. Polimeni, M. Capizzi, L. Seravalli, P. Frigeri, and S. Franchi J. Appl. Phys. 100, 084313 (2006)

232) Influence of N-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx G. Pettinari, F. Masia, A. Polimeni, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J. Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi Phys. Rev. B 74, 245202-1_245202-5 (2006)

233) Hydrostatic pressure experiments on dilute nitride alloys P.J. Klar, J. Teubert, M. Guengerich, T. Niebling, H. Gruening, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi, E.P. O’Reilly, A. Lindsay, M. Galluppi, L. Geelhaar, H. Riechert, and S. Tomic phys. stat. solidi (b) 244, 24-31 (2007)

234) Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy Maria Losurdo, Maria M Giangregorio, Giovanni Bruno, Tong-Ho Kim, Pae Wu, Soojeong Choi, April Brown, F. Masia, M. Capizzi, and A. Polimeni Appl. Phys. Lett. 90, 011910 (2007). 235) Photoreflectance and Reflectance investigation of deuterium-irradiated GaAsN M. Geddo, T. Ciabattoni, G. Guizzetti, M. Galli, M. Patrini, A. Polimeni, R. Trotta, M. Capizzi, G.Bais, M.Piccin, S. Rubini, F. Martelli, and A. Franciosi Appl. Phys. Lett. 90, 091907 (2007)

236) La via dell’idrogeno alle bande proibite M. Capizzi and A. Polimeni Sapere 73, 44 (2007)

237) Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P.J. Klar Phys. Rev. Letters 98, 146402 (2007)

239) Investigation of Compositional Disorder in GaAsNH M. Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P.J. Klar, and W. Stolz Proceedings of the 28th International Conference on the Physics of Semiconductors (Vienna, Austria, July 24th-28th, 2006), edited by W. Jantsch and F. Schaffler (American Institute of Physics) pp. 313-314

240) Photoluminescence under magnetic field and hydrostatic pressure in GaAs1-xNx for probing the compositional F. Masia, G. Pettinari, A. Polimeri, M. Felici, R. Trotta, M. Capizzi, T. Niebling, H. Günther, P. J. Klar, W. Stolz, A. Lindsay, E. P. O'Reilly, M. Piccin, G. Bais, S. Rubini, F. Martelli, and A. Franciosi dependence of carrier effective mass and gyromagnetic ratio Proceedings of the 28th International Conference on the Physics of Semiconductors (Vienna, Austria, July 24th-28th, 2006), edited by W. Jantsch and F. Schaffler (American Institute of Physics) pp. 157-158

241) Evidence of a New Hydrogen Complex in Dilute Nitride Alloys G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Felici, M. Capizzi, M. Güngerich, P.J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi Proceedings of the 28th International Conference on the Physics of Semiconductors (Vienna, Austria, July 24th-28th, 2006), edited by W. Jantsch and F. Schaffler (American Institute of Physics) pp. 155-156

243) Hydrogen, the modern philosopher’s stone M. Capizzi, A. Frova, and A. Polimeni Conference Proceedings 94, 31-42 (2007) Highlights on Spectroscopies of Semiconductors and Nanostructures, edited by G. Guizzetti, L.C. Andreani, F. Marabelli, and M. Patrini, Pavia 13 Giugno 2007 (SIF, Bologna, 2007)

244) Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution x-ray diffraction G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Felici, M. Capizzi, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi phys. stat. solidi (a) 204, 2766-2771 (2007).

246) Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry Maria Losurdo, Maria M Giangregorio, Giovanni Bruno, Tong-Ho Kim, Soojeong Choi, April Brown, Giorgio Pettinari, Mario Capizzi, and Antonio Polimeni Appl. Phys. Lett. 91, 081917 (2007).

247) Vibrational spectroscopy of hydrogenated GaP1-yNy S. Kleekajai, K. Colon, M. Stavola, W.B. Fowler, K.R. Martin, A. Polimeni, M. Capizzi, Y.G. Hong, H.P. Xin, and C.W. Tu Physica B 401-402, 347-350 (2007).

248) Formation and dissolution of D-N complexes in dilute nitrides M. Berti, G. Bisognin, D. De Salvador, E. Napolitani, S. Vangelista, A. Polimeni, M. Capizzi, F. Boscherini, G. Ciatto, S. Rubini, F. Martelli, and A. Franciosi Phys. Rev. B 76, 205323-1/205323-8 (2007).

249) Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O’Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli, and S. Rubini phys. stat. sol. (a) 205, 107–113 (2008).

250) Vibrational properties of the H-N-H complex in dilute III-N-V alloys Infrared spectroscopy and density functional theory S. Kleekajai, F. Jiang, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, C. W. Tu, G. Bais, S. Rubini, and F. Martelli Phys. Rev. B 77, 085213 (2008)

251) Spectroscopic approach to High Resolution X-Ray Diffraction for in-situ study of very small complexes the case of hydrogenate dilute nitrides G. Bisognin, D. De Salvador, E. Napoletani, M. Berti, A. Polimeni, M. Capizzi, S. Rubini, F. Martelli, and A. Franciosi J. Appl. Cryst. 41, 366-372 (2008). 252) Experimental evidence of different hydrogen donors in n-type InN G. Pettinari, F. Masia, M. Capizzi, A. Polimeni, M. Losurdo, G. Bruno, T.H. Kim, S. Choi, A. Brown, V. Lebedev, V. Cimalla, and O. Ambacher Phys. Rev. B 77, 125207-1_125207-6 (2008).

253) Role of strain and properties of N clusters at the onset of the alloy limit in GaAs1-xNx A. Polimeni, F. Masia, G. Pettinari, R. Trotta, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, and P. J. Klar Phys. Rev. B 77, 155213-1_155213_8 (2008).

254) Zero-phonon lines nitrogen-cluster states in GaNxAs1-xH identified by time-resolved photoluminescence K. Hantke, S. Horst, S. Chatterjee, P.J. Klar, K. Volz, W. Stolz, W.W. Ruehle, F. Masia, G. Pettinari, A. Polimeni, and M. Capizzi J. Mater. Sci 43, 4344–4347 (2008)

256) Influence of bismuth incorporation on the valence and conduction band edges of GaAs1-xBix G. Pettinari, A. Polimeni, M. Capizzi, J. H. Bokland, P. C. M. Christianen, J.C. Maan , E. C. Young, and T. Tiedje Appl. Phys. Lett. 92, 262105 (2008)

259) Trends in the electronic structure of dilute nitride alloys E.P. O’Reilly, A. Lindsay, P.J. Klar, A. Polimeni, and M. Capizzi Semicond. Sci. Technol. 24, 033001-0330011 (2009).

260) Local structure of nitrogen-hydrogen complexes in dilute nitrides G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, M. Capizzi, M. Berti, G. Bisognin, D. De Salvador L. Floreano, F. Martelli, S. Rubini, and L. Grenouillet Phys. Rev. B 79, 165205 (2009).

261) Carrier mass measurements in degenerate indium nitride G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P.C.M. Christianen, J.C. Maan, Lebedev, V. Cimalla, and O. Ambacher Phys. Rev. B 79, 165207 (2009).

Band gap engineering in dilute nitride by hydrogen irradiation

229) In-plane band gap engineering by modulated hydrogenation of dilute nitride semiconductors
M. Felici, A. Polimeni, G. Salviati, L. Lazzarini, N. Armani, F. Masia, M. Capizzi, F. Martelli, M. Lazzarino, G. Bais, M. Piccin, S. Rubini, and A. Franciosi
Adv. Mater. 18, 1993-1997 (2006)

242) M. Felici, A. Polimeni, F. Masia, R.Trotta, G. Pettinari, M. Capizzi, G. Salviati, L. Lazzarini, N. Armani, M. Piccin, G. Bais, F. Martelli, S. Rubini, A. Franciosi, and L. Mariucci
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors
Proceedings of the 28th International Conference on the Physics of Semiconductors (Vienna, Austria, July 24th-28th, 2006), edited by W. Jantsch and F. Schaffler (American Institute of Physics) pp. 31-32

245) R. Trotta, A. Polimeni, M. Felici, G. Pettinari, M. Capizzi, A. Frova, G. Salviati, L. Lazzarini, N. Armani, L. Mariucci, G. Bais, F. Martelli, and S. Rubini
Hydrogen induced nitrogen passivation in dilute nitrides A novel approach to defect engineeering
S. Francisco, CA, USA,
Mater. Res. Soc. Symp. Proc. 994, F02-08 (2007)

255) R. Trotta, A. Polimeni, M. Capizzi, D. Giubertoni, M. Bersani, G. Bisognin, M. Berti, S. Rubini, F. Martelli, L. Mariucci, M. Francardi, and A. Gerardino
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsNH heterostructures
Appl. Phys. Lett. 92, 221901 (2008).

258) L. Felisari, V. Grillo, F. Martelli, R. Trotta, A. Polimeni, M. Capizzi, F. Jabeen , and L. Mariucci
In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsNH heterostructures
Appl. Phys. Lett. 93, 102116 (2008).