MARIO CAPIZZI - CURRICULUM VITAE (Updated to May 2009)
  • Born in Rome on Feb. 13, 1945
    * Physics Degree (Laurea) at the University of Roma "La Sapienza" in 1968
    * Married with Silvana Nalli, father of one boy, Marco, born in 1976
    * Lives in Rome (Office tel. 06-49914381, Fax: 06-4957697 or 49914387,
    E-mail: mario.capizzi@roma1.infn.it)

Present academic role and functions:

Full professor of "Condensed matter physics" at the Physics Department of the University of Rome "La Sapienza".
Member of the Teachers' Council of the Materials Science Doctorate School at the University of Rome.

Main research interests:

Previous
Electronic properties of ferroelectrics, semiconductors, and high Tc superconductors investigated by optical spectroscopy (absorption, reflectivity, photoluminescence).
Many-body effects resulting from the interaction between carriers in materials that are strategic for microelectronics, such as Si (Ge) and III-V compounds.
Role of impurities in semiconductors, including the insulator-to-metal transition in highly doped Si. In the III-V alloys.
Effects of disorder on the photoluminescence lineshape in bulk materials, heterostructures, quantum wells and dots.
Role of electron-phonon interaction in quantum dots.
Optical properties of (InGa)(AsN).
Hydrogen passivation of defects in single crystals as well as in amorphous semiconductors.
Polaron effects in high Tc superconductors.
 
Present
Optical and transport properties of dilute nitrides and In rich InGaN alloys
Band gap engineering of dilute nitrides by post-growth hydrogen irradiation

Visiting abroad:

E.T.H. (Zurich), E.N.S. (Paris), Bell Labs (Murray Hill), EPFL (Lausanne), and Stuttgart University.

Refereing:

Physical Review Letters, Physical Review B, Applied Physics Letters, Journal of Applied Physics, Semiconductors Science and Technology, Solid State Communications, J. of Physics, etc.

Other present scientific roles:

2001-2002, in charge of a national project of the Italian Ministery for Education aiming at the study of InGaAsN/GaAs heterostructures for application in LEDs an lasers of interest for optoelectronics.
2001-2004, in charge of a research unit in the RTD-Project "Nanomat: Self-assembled nanostructured materials for electronic and optoelectronic applications" of the European Community Union.
1998-2002, in charge of a research unit in the Project "MADESS: Materials and Devices for Electronics" of the Italian National Research Council, aiming at the optimization of InGaAs/GaAs quantum dots for application in LEDs and lasers.
Recently, he has been member of the:
- International Advisory Committee of the 26th International Conference on the Physics of Semiconductors, Edinburgh 2002.
- International Program Committee of Condensed Matter Division (CMD) Conference of the EPS, Brighton 2002.
- Program Committee of the International Conference on Superlattices, Nanostructures and Nano devices (ICSNN-06).
- International Advisory Committee of the 24th International Conference on Defects in Semiconductors (ICDS - 2007, Albuquerque, New Mexico, USA).
In the period 2006-2008, he has acted as referee of EPSRC, the English Agency for support to University research in the field of Condensed Matter Physics and Electrical Engineering.

Publications:

More than 160 papers on international journals.
  1. F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S.B. Healy, E.P. O’Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz
    Interaction between conduction band edge and nitrogen states probed by carrier effective mass measurements in GaAs1-xNx    
    Phys. Rev. B 73, 073201 (2006)
  2. M. Felici, A. Polimeni, M. Capizzi, Y. Nabetani, T. Okuno, K. Aoki, T. Kato, T. Matsumoto, and T. Hirai:
    Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O
    Appl. Phys. Lett. 88,  101910 (2006)
  3. M.Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P.J. Klar, and W. Stolz:
    Compositional disorder in GaAs1-xNx:H investigated by photoluminescence 
    Phys. Rev. B 74, 085203-1/7(2006)
  4. G. Bisognin, D. De Salvador, E. Napolitani, A.V. Drigo, A. Sambo, M. Berti, A. Polimeni, M. Felici, M. Capizzi, M. Güngerich, P.J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi:
    Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain
    Appl. Phys. Lett. 89, 061904-1/3 (2006)
  5. M. Felici, A. Polimeni, G. Salviati, L. Lazzarini, N. Armani, F. Masia, M. Capizzi, F. Martelli, M. Lazzarino, G. Bais, M. Piccin, S. Rubini, and A. Franciosi:
    In-plane band gap engineering by modulated hydrogenation of dilute nitride semiconductors
    Adv. Mater. 18, 1993-1997 (2006)
  6. S.V. Dudiy, Alex Zunger, M. Felici, A. Polimeni, M. Capizzi, H.P. Xin and C.W. Tu:
    Nitrogen-induced perturbation of the valence band states in GaPN alloys
    Phys. Rev. B 74, 155303-1/6 (2006).
  7. G. Pettinari, F. Masia, A. Polimeni, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J.
    Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi:
    Influence of N-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx
    Phys. Rev. B 74, 245202-1_245202-5 (2006)
  8. Maria Losurdo, Maria M Giangregorio, Giovanni Bruno, Tong-Ho Kim, Pae Wu, Soojeong Choi, April
    Brown, F. Masia, M. Capizzi, and A. Polimeni:
    Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy
    Appl. Phys. Lett. 90, 011910 (2007).
  9. M. Geddo, T. Ciabattoni, G. Guizzetti, M. Galli, M. Patrini, A. Polimeni, R. Trotta, M. Capizzi,
    G. Bais, M.Piccin, S. Rubini, F. Martelli, and A. Franciosi
    Photoreflectance and Reflectance investigation of deuterium-irradiated GaAsN
    Appl. Phys. Lett. 90, 091907 (2007)
  10. G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P.J. Klar:
    Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure
    Phys. Rev. Letters  98, 146402 (2007)
  11. Maria Losurdo, Maria M Giangregorio, Giovanni Bruno, Tong-Ho Kim, Soojeong Choi, April Brown,
    Giorgio Pettinari, Mario Capizzi, and Antonio Polimeni:
    Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry
    Appl. Phys. Lett. 91, 081917 (2007).
  12. M. Berti, G. Bisognin, D. De Salvador, E. Napolitani, S. Vangelista, A. Polimeni, M. Capizzi, F.
    Boscherini, G. Ciatto, S. Rubini, F. Martelli, and A. Franciosi:
    Formation and dissolution of D-N complexes in dilute nitrides
    Phys. Rev. B 76, 205323-1/205323-8 (2007).
  13. S. Kleekajai, F. Jiang, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, C. W. Tu, G. Bais, S. Rubini, and F. Martelli:
    Vibrational properties of the H-N-H complex in dilute III-N-V alloys: Infrared spectroscopy and density functional theory
    Phys. Rev. B 77, 085213 (2008)
  14. G. Bisognin, D. De Salvador, E. Napoletani, M. Berti, A. Polimeni, M. Capizzi, S. Rubini, F. Martelli, and A. Franciosi:
    Spectroscopic approach to High Resolution X-Ray Diffraction for in-situ study of very small complexes: the case of hydrogenate dilute nitrides
    J. Appl. Cryst. 41, 366-372 (2008).
  15. G. Pettinari, F. Masia, M. Capizzi, A. Polimeni, M. Losurdo, G. Bruno, T.H. Kim, S. Choi, A. Brown, V. Lebedev, V. Cimalla, and O. Ambacher:
    Experimental evidence of different hydrogen donors in n-type InN
    Phys. Rev. B 77, 125207-1_125207-6 (2008).
  16. A. Polimeni, F. Masia, G. Pettinari, R. Trotta, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, and P. J. Klar:
    Role of strain and properties of N clusters at the onset of the alloy limit in GaAs1-xNx
    Phys. Rev. B 77, 155213-1_155213_8 (2008).
  17. R. Trotta, A. Polimeni, M. Capizzi, D. Giubertoni, M. Bersani, G. Bisognin, M. Berti, S. Rubini, F. Martelli, L. Mariucci, M. Francardi, and A. Gerardino:
    Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures
    Appl. Phys. Lett. 92, 221901 (2008).
  18. G. Pettinari, A. Polimeni, M. Capizzi, J. H. Bokland, P. C. M. Christianen, J.C. Maan , E. C. Young, and T. Tiedje:
    Influence of bismuth incorporation on the valence and conduction band edges of GaAs1-xBix
    Appl. Phys. Lett. 92, 262105 (2008)
  19. S. Sanguinetti, M. Guzzi, E. Grilli, M. Gurioli, L. seravalli, P. Frigeri, S. Franchi, M. Capizzi, S. Mazzucato, and A. Polimeni:
    Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots
    Phys. Rev. B 78, 085313-1/ 085313-6 (2008).
  20. L. Felisari, V. Grillo, F. Martelli, R. Trotta, A. Polimeni, M. Capizzi, F. Jabeen , and L. Mariucci:
    In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures
    Appl. Phys. Lett. 93, 102116 (2008).
  21. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, M. Capizzi, M. Berti, G. Bisognin, D. De Salvador L. Floreano, F. Martelli, S. Rubini, and L. Grenouillet:
    Local structure of nitrogen-hydrogen complexes in dilute nitrides
    Phys. Rev. B 79, 165205 (2009).
  22. G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P.C.M. Christianen, J.C. Maan, Lebedev, V. Cimalla, and O. Ambacher:
    Carrier mass measurements in degenerate indium nitride
    Phys. Rev. B 79, 165207 (2009).