Curriculum Vitae of Antonio Polimeni

 

Personal data

Born in Rome ( Italy ) on November 14, 1968

 

Present Position

Lecturer at the Physics Department, University of Rome “La Sapienza”.

 

Address:

Piazzale A. Moro 2, 00185 Roma, Italy

Phone: +39-06-49914770 (office), +39-06-49914385 (lab.)

Fax: +39-06-4957697

E-mail: polimeni@roma1.infn.it

 

 

Education and Research Experience

1988 – 1993

Laurea degree in Physics, 22/7/1993 , Physics Department, University of Rome “La Sapienza”.

Subject:

“Optical characterisation of InGaAs/GaAs quantum heterostructures: carrier confinement in barriers and wells”

Supervisors: Prof. M. Capizzi, Prof. A. Frova.

Mark: 110/110 cum Laude.

 

1993 – 1996

PhD. in Physics, Physics Department, University of Rome “La Sapienza”.

Subject:

“Optical properties of InGaAs/GaAs quantum heterostructures and disorder effects”

Supervisor: Prof. M. Capizzi.

1997 – 1999

Research Assistant in the

“Quantum Transport and Spectroscopy of Semiconductors” group headed by Prof. L. Eaves

at the School of Physics and Astronomy, Nottingham University , United Kingdom .

1998 – 1999 Tutor at the School of Physics and Astronomy, Nottingham University , United Kingdom .
November 1999 – October 2002
Lecturer at Physics Department, University of Rome “La Sapienza”.

 

 

November 2002 Granted tenure as Lecturer at Physics Department, University of Rome “La Sapienza”.

Track Record

(numbers in square brackets refer to the publication list)

 

I started my research activity as a laureando (laurea degree student) in 1992 at the Physics Department, University of Rome “La Sapienza” doing a thesis on an experimental and theoretical study of the electronic states in quantum barriers [2].

In 1993 I started my PhD in Physics in the laboratory of Optical Spectroscopy of Semiconductors headed by Prof. M. Capizzi. From 1993 to 1996, I investigated the electronic properties of low-dimensional semiconductor heterostructures (quantum wells and dots) by means of photoluminescence (PL) and PL excitation spectroscopy. In particular, I studied the role played by interfacial and alloy disorder on the lineshape of radiative recombination in quantum wells [9,10,12], the effect of atomic hydrogen irradiation on these systems [5], and finally I investigated the electronic properties of semiconductor quantum dots [13]].

The study of the electronic properties of quantum dots continued from 1997 to 1999 in the group of “Quantum Transport and Spectroscopy of Semiconductors” headed by Prof. L. Eaves at the School of Physics and Astronomy, Nottingham University , United Kingdom , where I was appointed as a Research Assistant for three years. During my permanence in Nottingham I was fully responsible of my own research projects. This gave me the opportunity to interact and collaborate with many research groups located in U.K. , Europe and overseas. At Nottingham , I investigated the structural [19]], transport [20,50], and optical properties [33,42,49] of self-assembled quantum dots, including the effects of magnetic and electric fields on the dot electronic structure [28,47]. A relevant part of my research activity at Nottingham was focussed on the device applications of quantum dots for high-performance semiconductor lasers [19,32,53]. The devices obtained featured performances comparable with the best reported in the literature. At Nottingham I was involved also in teaching as a tutor of undergraduate students.

Since November 1999 I have been appointed as a Lecturer at the Physics Department, University of Rome “La Sapienza”. After three years’ probation I was granted a tenure position. In Rome , my interest moved on the electronic properties of dilute nitride and oxide semiconductors, which are materials of high relevance for optoelectronic, photovoltaics, and solid state lighting applications. In particular, the response of these materials to a change of temperature has been thoroughly investigated by optical spectroscopic techniques [48,59,64,95,101,112]]. High magnetic fields have been employed to understand the peculiar physical properties of dilute nitrides [86,88,92,94,109,117] also in the presence of high hydrostatic pressure [121]. The most relevant results of my activity in Rome are related to the discovery of the effects that hydrogen irradiation exerts on the electronic and structural properties of dilute nitrides [62,63,70,76,87,90,92,93] and oxides [95]. This discovery offers the opportunity to fabricate novel nanostrctures with planar architecture [115,135].

Numerous talks at topical and general conferences on condensed matter physics have been given by me and my collaborators during the last years on these effects providing my group with the possibility of establishing strong collaborations with leading research groups all over the world. I am presently focused on the exploitation of these H-related effects for developing a novel method for the fabrication of nanostructures based on an in-plane band gap engineering [115].

I am is author of more than 140 peer reviewed papers on international scientific journals, of 2 contributed book chapters, of 2 invited journal papers, and of about 30 papers on conference proceedings. I gave invited talks at the most important international conferences on fundamental and materials physics such as MRS, EPS, ICDS, E-MRS, and the International Society of Optical Engineering. I act as referee for Physical Review Letters, Physical Review B, Nature Materials, Semiconductor Science and Technology, Nanotechnology, and other international scientific journals.

My scientific activity has been awarded in 2000 with the prize for the best oral presentation at the LXXXVI national conference of the Italian Physical Society (Condensed Matter Physics section), and with “Umberto Maria Grassano Prize” of the Italian Physical Society. In 2003, I was awarded the “Ugo Campisano Prize” given by the Italian National Institute of Matter Physics to a researcher younger than 40 years. In 2004, I obtained an appointment of a two year grant “Young Researcher Project” by the Italian Ministry of University and Scientific and Technological Research.

I have been supervisor of 6 PhD students and 17 graduate students.

Research highlights

(numbers in square brackets refer to the publication list)

 

The main results of my scientific activity regard the experimental study of the optical and transport properties of semiconducting nanostructures and their application for optoelectronic devices.

·         Observation of quantum confinement on excitons in quantum barriers [2].

·         Experimental characterization and modeling of microscopic disorder on the optical properties of semiconductor quantum wells [9,10].

·         Study of the electronic properties of semiconductor quantum dots [13,20,42].

·         Realization and optimization of lasers based on quantum dots [19,53].

·         Magneto-tunneling spectroscopy applied to quantum dot containing devices [50,51].

·         Electronic properties of dilute nitrides under high magnetic field and hydrostatic pressure [86,88,92,121].

·         Effect of hydrogen on the electronic and structural properties of III-N-V materials [63,76,87,90].

·         Defect-assisted band gap engineering in dilute nitrides [115,135].

Awards and grants

 

September 2000

 

“Umberto Maria Grassano” Prize of the Italian Physical Society.

 

October 2000

 

First prize for the best oral presentation at the LXXXVI National Conference of the Italian Physical Society ( Palermo ) (Condensed Matter Physics section).

 

May 2002

Appointment of a two year grant “Young Researcher Project” by the Italian Ministry of University and Scientific and Technological Research for the study of the band structure of (InGa)(AsN) alloys.

 

June 2003

“Ugo Campisano” Prize of the National Institute of Matter Physics awarded to young researchers in the field of Materials Science.

 

June 2009

“Premio Tomassoni” by Sapienza Universita’ di Roma

- 2001-2004    In charge of a workpackage within an EU project in the FP5 programme named Nanomat (Nanostructured and self-assembled materials for electronic and optoelectronics applications, G5RD-CT-2001-00545).
- 2002   Two-year grant by the Italian Ministry of Research and University named “Progetto Giovani Ricercatori” for “txperimental studies of the band structure of InGaAsN/GaAsquantum wells by optical spectroscopy under magnetic field”.
- 2005 and 2006    “Programma Vigoni” funds by the Italian Ministry of University and Deutscher Akademischer Austauschdienst (Germny) for “Study of the physical properties of strategic materials for telecommunications and high efficiency conversion of solar energy”.
- 2004, 2005, and 2006   Ateneo funds by Universita di Roma “La Sapienza”.

  Professional activities

- Referee for Physical Review Letters, Physical Review B, Nature Materials, Semiconductor Science and Technology, Nanotechnology, and other scientific journals.
- Member of the Campisano Prize committee (Istituto Nazionale di Fisica della Materia).

- Member of the organizing committee of the 22nd conference of the Condensed Matter Division of the European Physical Society (2008).

- Member of the international advisory committee of the international conference “Recent Advances of Low Dimensional Structures and Devices” (2008).

- Reviewer of the Academy of Sciences of the Czech Republic .

- Member of the EU COST Action “Novel gain materials and devices based on III-N-V compounds”.


Short stays in international labs

May 2001: European Synchrotron Radiation Facility (ESRF), Grenoble ( France ).

October 2002: Grenoble High Magnetic Field Laboratory (GHMLF), Grenoble ( France ).

October 2005 Philipps-University of Marburg ( Germany ).

February 2008 and 2009: High Field Magnet Laboratory (HMFL), Nijmegen (The Netherlands ).


University teaching experience

- 2000-2006 Exercise classes in General Physics (Mechanics, Thermodinamics, and Electromagnetism Courses), Optics Laboratory, and Condensed Matter Physics Laboratory.

- Specialized courses for Physics PhD students.

- 2005-2006 Tenure of Electromagnetism and Optics Laboratory.

- 2000-2006 Supervisor of 6 PhD thesis in Physics and Materials Sciences, Supervisor of 9 Laurea thesis, 1 Laurea Specialistica thesis, and 10 Laurea breve thesis.


Oral contributions to schools, workshops and conferences

Invited talks

- Giugno 2009   “Hydrogen-induced defect engineering in dilute nitrides semiconductors”
15th Semiconducting and Insulating Materials Conference, Vilnius (Lithuania).

 

- Aprile 2007     “Hydrogen-induced nitrogen passivation in dilute nitrides: a novel approach to defect engineering”
Material Research Society spring Meeting, San Francisco (CA, USA ).

 

- Gennaio 2005  “Carrier localization in (InGa)(AsN) alloys”

Optoelectronics 2005, San Jose (CA, USA ).

 

- Luglio 2004     “Probing the electronic properties of dilute nitrides by carrier localization and effective mass measurements”
General Conference of the Condensed Matter Division, European Physical Society, Prague (Czech Republic).

 

- Luglio 2003     “Hydrogen related effects in diluted nitrides”
XXII International Conference on Defects in Semiconductors

Aarhus ( Denmark ).

 

- Giugno 2002   “Hydrogen as a probe for studying the electronic properties of (InGa)(AsN)/GaAs heterostructures”
International symposium on “N-containing III-V semiconductors: Fundamentals and Applications” of the European Materials Research Society, E-MRS, Strasbourg ( France ).

 

 

- Aprile 2002     “Hydrogen as a probe of the nitrogen charge distribution in (InGa)(AsN)/GaAs”
19th General Conference of the Condensed Matter Division of the European Physical Society, Brighton (United Kingdom).

 

 

- Febbraio 2002 “Interplay of Nitrogen and Hydrogen in (InGa)(AsN)/GaAs heterostructures”
XIV “Ural International Winter School on the Physics of Semiconductors Electronic properties of low-dimensional semi- and superconductor structures”, Ekaterinburg (Russia).

 


Invited seminars

May 2003

“Effects of hydrogen on the electronic and lattice properties of (InGa)(AsN)”

Department of Physics and Material Sciences Center , Philipps-University, Marburg ( Germany ).

 

July 1999

“Carrier hopping in self-assembled quantum dots”

Nippon Telegraph and Telephone (NTT), Tokyo ( Japan ).

 

February 1999

‘’Carrier hopping in InAs/AlyGa1-yAs self-organized quantum Dots’’

Max-Planck Institute of Microstructure Physics, Halle ( Germany ).

 

February 1998

“Next generation laser diodes”,

Department of Physics, University of Sheffield ( United Kingdom ).

 

January 1998

“ Optical and Microstructural Studies of Heterostructures and Injection Lasers incorporating (InGa)As Quantum Dots”,

Institut für Festkorperphysik, TU Berlin (Germany).

 

October 1996

“Disorder and localization effects in InGaAs/GaAs quantum heterostructures”

Department of Physics, University of Nottingham , Nottingham ( United Kingdom ).

 


  Invited papers in books or reviews

A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, M. Felici and M. Capizzi

“Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy Alloys”, in

Dilute Nitrides Semiconductors, edited by M. Henini (Elsevier, Oxford , UK , 2005)

 

A. Polimeni and M. Capizzi

“Role of Hydrogen in Dilute Nitrides”, in

Physics and applications of dilute nitrides, edited by I. A. Buyanova and W. M. Chen (Taylor and Francis Editors 2004)

 

A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, and M. Capizzi

“Magnetophotoluminescence studies of InxGa1-xAs1-yNy: a measurement of the electron effective mass, exciton size, and degree of carrier localization”, in

Journal of Physics: Condensed Matter 16, S3186 (2004)

 

A. Polimeni, G. Baldassarri, M. Bissiri, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel

”Role of hydrogen in III-N-V compound semiconductors”, in

Semiconductors Science and Technology 17, 797 (2002)

 

 


Publications in International refereed journals

 

2009

 

141. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, M. Capizzi, M. Berti, G. Bisognin, D. De Salvador, L. Floreano, F. Martelli, S. Rubini, and L. Grenouillet
“Local structure of nitrogen-hydrogen complexes in dilute nitrides”

Physical Review B 79 165205 (2009).

 

140. G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, V. Lebedev, V. Cimalla, and O. Ambacher
“Carrier mass measurements in degenerate indium nitride”

Physical Review B 79 165207 (2009).

 

139.E. P. O'Reilly, A. Lindsay, P. J. Klar, A. Polimeni, and M. Capizzi (2009)

”Trends in the electronic structure of dilute nitrides”

Semiconductor Science and Technology 24, 1 (2009).

 

 

2008

 

138. L. Felisari, V. Grillo, F. Martelli, R. Trotta, A. Polimeni, M. Capizzi, F. Jabeen, and L. Mariucci
”In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructure”
Applied Physics Letters 93, 102116 (2008)

 

137. S. Sanguinetti, M. Guzzi, E. Grilli, M. Gurioli, L. Seravalli, P. Frigeri, S. Franchi, M. Capizzi, S. Mazzuccato, and A. Polimeni
”Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots”
Phys. Rev. B 78, 085313 (2008)

 

136. G. Pettinari, A. Polimeni, M. Capizzi , J. Bockland , P. Christianen , J. C. Maan , E. Young, and T. Tiedje
”Influence of bismuth incorporation on the valence and conduction band edges of GaAs1-xBix”
Applied Physics Letters 92, 262105 (2008)

 

135. R. Trotta, A. Polimeni, M. Capizzi, D. Giubertoni, M. Bersani, G. Bisognin, M. Berti, S. Rubini, F. Martelli, L. Mariucci, M. Francardi, and A. Gerardino
”Effect of hydrogen incorporation temperature in in-plane engineered GaAsN/GaAsN:H heterostructures”
Applied Physics Letters 62, 221901 (2008)

 

134. K. Hantke, S. Horst, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Ruehle, F. Masia, G. Pettinari, A. Polimeni, and M. Capizzi
”Zero-phonon lines of nitrogen-cluster states in GaNxAs1-x: H identified by time-resolved photoluminescence”
Journal of Materials Science 43, 4344 (2008)

 

133. A. Polimeni, F. Masia, G. Pettinari, R. Trotta, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, and P. J. Klar
”Role of strain and properties of N clusters at the onset of the alloy limit in GaAs1-xNx”
Physical Review B 77, 155213 (2008)

132. G. Pettinari, F. Masia, M. Capizzi, A. Polimeni, M. Losurdo, G. Bruno, T.H. Kim, S. Choi, A. Brown, V. Lebedev, V. Cimalla, O. Ambacher
” Experimental evidence of different hydrogen donors in n-type InN”
Physical Review B 77, 125207 (2008)

131. G. Bisognin, D. De Salvador, E. Napolitani, M. Berti; A. Polimeni, M. Capizzi, S. Rubini, F. Martelli, A. Franciosi
” High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides”
Journal of applied crystallography 41, 366 (2008)

 

130. S. Kleekajai, F. Jiang, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, C. W. Tu, G. Bais, S. Rubini, and F. Martelli
”Vibrational properties of the H-N-H complex in dilute III-N-V alloys: Infrared spectroscopy and density functional theory”
Physical Review B 77, 085213 (2008)

129. A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli, and S. Rubini
”Photoluminescene under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN“
Physica Status solidi A-Applications and Materials Science 205, 107 (2008)

 

 

2007

 

128. G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Felici, M. Capizzi, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, A. Franciosi

“Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction”

Physica Status Solidi A: Applications and Materials Science 204, 2766 (2007)

 

127. F. Boscherini, M. Malvestuto, G. Ciatto, F. D'Acapito, G. Bisognin, D. De Salvador, M. Berti, M. Felici, A. Polimeni, Y. Nabetani

“X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers”
Journal of Physics- Condensed Matter 19, 446201 (2007)

 

126. Marina Berti, Gabriele Bisognin, Davide De Salvador, Enrico Napolitani, and Silvia Vangelista, Antonio Polimeni, Mario Capizzi, Federico Boscherini, Gianluca Ciatto, Silvia Rubini, Faustino Martelli, and Alfonso Franciosi
”Formation and dissolution of D-N complexes in dilute nitrides”
Physical Review B 76, 205323 (2007)

 

125. Maria Losurdo, Maria M. Giangregorio, and Giovanni Bruno Tong-Ho Kim, Soojeong Choi, April S. Brown Giorgio Pettinari, Mario Capizzi, and Antonio Polimeni

”Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry”
Applied Physics Letters 91, 081917 (2007)

 

124. S. Kleekajai, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, and C. W. Tu
”Vibrational spectroscopy of hydrogenated GaP1-yNy”
Physica B 401-402, 347 (2007)

 

123. G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P. J. Klar
”Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure”
Physical Review Letters 98, 146402 (2007)

 

122. M. Geddo, T. Ciabattoni, G. Guizzetti, M. Galli, M., Patrini, A. Polimeni, R. Trotta, M. Capizzi, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
”Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN”
Applied Physics Letters 90, 091907 (2007)

 

121. M. Losurdo, M. M. Giangregorio, G. Bruno, T.-H. Kim, P. Wu, S. Choi, A. Brown, F. Masia, M. Capizzi, and A. Polimeni
”Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy”
Applied Physics Letters 90, 011910 (2007)

 

120. P. J. Klar, J. Teubert, M. Güngerich, T. Niebling, H. Grüning, W. Heimbrodt, K. Volz, W., Stolz, A. Polimeni, M. Capizzi, E. P. O'Reilly, A. Lindsay, M. Galluppi, L. Geelhaar, H. Riechert, and S. Tomić
”Hydrostatic pressure experiments on dilute nitride alloys”
Physica Status Solidi (B) 244, 24 (2007)


2006

 

119. G. Pettinari, F. Masia, A. Polimeni,, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J. Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi,
“Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx”
Physical Review B, 74, 245202 (2006)

 

118. M. Gurioli, M. Zamfirescu, A. Vinattieri, S. Sanguinetti, E. Grilli, M. Guzzi, S. Mazzucato, A. Polimeni, M. Capizzi, L. Serevalli, P. Frigeri, and S. Franchi
“Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures”
Journal of Applied Physics, 100, 84313 (2006)

 

117. M. Güngerich, P. J. Klar, W. Heimbrodt, K. Stolz, K. Volz, K. Köhler, J. Wagner, A. Polimeni, and M. Capizzi
“Correlation of band formation and local vibrational mode structure in Ga0.95Al0.05As1-xNx with 0£x£0.03”
Physica Status Solidi C 3, 619 (2006)

 

116. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, and M. Capizzi
“C2v nitrogen-hydrogen complexes in GaAsN revealed by X-ray absorption near-edge spectroscopy and ab initio simulations”
Physica Status Solidi C 3, 1836 (2006)

 

115. M. Felici, A. Polimeni, G. Salviati, L. Lazzarini, N. Armani, F. Masia, M. Capizzi, F. Martelli, M. Lazzarino, G. Bais, M. Piccin, S. Rubini, A. Franciosi
In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors;
Advanced Materials 18, 1993 (2006)                                                                                                                                    

 

114. M. Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P. J. Klar, W. Stolz
”Compositional disorder in GaAs1-xNx:H investigated by photoluminescence”
Physical Review B 74, 85203 (2006)

 

113. G. Bisognin, D. De Salvador, A. V. Drigo, E. Napolitani, A. Sambo, M., Berti, A. Polimeni, M. Felici, M. Capizzi, M. Güngerich, P. J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, A. Franciosi
”Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain”
Applied Physics Letters 89, 61904 (2006)                                                                                                                           

 

112. S. V. Dudiy, A. Zunger, M. Felici, A. Polimeni, M. Capizzi, H. P. Xin, and C. W. Tu
”Nitrogen-induced perturbation of the valence band states in GaP1-xNx alloys”
Physical Review B 74, 155303 (2006)

 

111. F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais,  M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, W. Stolz
“Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx
Physical Review B 73, 073201 (2006)                                                                                                                                   

 

110. M. Felici, A. Polimeni, M. Capizzi, Y. Nabetani, T. Okuno, K. Aoki, T. Kato, T. Matsumoto, T Hirai
 “Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O”
Applied Physics Letters 88, 101910 (2006)

 

109. J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi
“Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)”
Physica E 32, 218 (2006)

 

108. I. A. Buyanova, M. Izadifard, T. Seppanen, J. Birch, W. M. Chen, S. J. Pearton, A. Polimeni, M. Capizzi, M. S. Brandt, C. Bihler, Y. G. Hong, C. W. Tu,
”Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys”
Physica B 376, 568 (2006)

2005

 

107. K. Hantke, J. D. Heber, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, A. Polimeni, and M. Capizzi
“Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells”
Applied Physics Letters 87, 252111 (2005)

 

106. S. Mazzucato, D. Nardin, M. Capizzi, A. Polimeni, A. Frova, L. Serravalli, and S. Franchi
“Defect passivation in strain engineered InAs/(InGa)As quantum dots”
Materials Science & Engineering C-Biomimetic ans Supramolecular Systems 25 830, (2005)

 

105.G. Ciatto, H. Renevier, M. G. Proietti, A. Polimeni, M. Capizzi, S. Mobilio, and F. Boscherini
“Effects of hydrogenation on the local structure of InxGa1–xAs1–yNy quantum wells and GaAs1–yNy epilayers”
Physical Review B 72, 085322 (2005)

 

104. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, and M. Capizzi
“Nitrogen-hydrogen complex in GaAsxN1–x revealed by x-ray absorption spectroscopy”
Physical Review B 71, 201301 (2005)                                                                                                                                   

 

103. M. Felici, A. Polimeni, A. Miriametro, M. Capizzi, H. P. Xin, and C. W. Tu
“Free carrier and/or exciton trapping by nitrogen pairs in dilute GaP1-xNx”
Physical Review B 71, 045209 (2005)

 

102. G. Ciatto, F. D’Acapito, S. Sanna, V. Fiorentini, A. Polimeni, M. Capizzi, S. Mobilio, and F. Bosherini
“Comparison between experimental and theoretical determination of  the local structure of the GaAs1-yNy dilute nitride alloy”
Physical Review B 71, 115210 (2005)

 

2004

 

101. A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, and M. Capizzi
” Magnetophotoluminescence studies of InxGa1-xAs1-yNy: a measurement of the electron effective mass, exciton size, and degree of carrier localization”
Journal of Physics: Condensed Matter 16, S3186 (2004)

 

100. M. Izadifard, I. A. Buyanova, W. M. Chen, A. Polimeni, M. Capizzi, and C. W. Tu
”Role of hydrogen in improving optical quality of GaNAs alloys”
Physica E 20, 313 (2004)

 

99. D. Ochoa, A. Polimeni, M. Capizzi, A. Frova, L. Seravalli, M. Minelli, P. Frigeri, and S. Franchi
”Hydrogenation of strain engineered InAs/InxGa1-xAs quantum dots”
Physica Status Solidi C 1, 581 (2004)

 

98. I. A. Buyanova, M. Izadifard, I. G. Ivanov, J. Birch, W. M. Chen, M. Felici, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, and C. W. Tu
 “Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1-x alloys: A proof for a general property of dilute nitrides”
Physical Review B 70, 245215, (2004)

 

97. M. Felici, V. Cesari, A. Polimeni, A. Frova, M. Capizzi, Y. D. Choi, B. O, Y.-M. Yu, Y. Nabetani, Y. Ito, T. Okuno, T. Kato, T. Matsumoto, T. Hirai, I. K. Sou, and W. K. Ge
“Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic oxygen impurities”
IEE Proc.-Optoelectron. 151, 465 (2004)

 

96. A. Polimeni, M. Capizzi, Y. Nabetani, Y. Ito, T. Okuno, T. Kato, T. Matsumoto, and T. Hirai
“Temperature dependence and bowing of the bandgap in ZnSe1-xOx”
Applied Physics Letters 84, 3304 (2004)

 

95. A. Polimeni, F. Masia, A. Vinattieri, G. Baldassarri Hoeger von Hoegersthal, and M. Capizzi
“Single carrier localization in InxGa1-xAs1-yNy investigated by magnetophotoluminescence”
Applied Physics Letters 84, 2295 (2004)

 

94. F. Jiang, Michael Stavola, M. Capizzi, A. Polimeni, A. Amore Bonapasta, and F. Filippone
“Vibrational spectroscopy of hydrogenated GaAs1-yNy: A structure-sensitive test of an H2*(N) model”
Physical Review B 69, 041309 (2004)                                                                                                                                   

 

 

93. A. Polimeni, G. Baldassarri Hoeger von Hoegersthal, F. Masia, A. Frova, M. Capizzi, Simone Sanna, Vincenzo Fiorentini, P. J. Klar, and W. Stolz
“Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs1-xNx”
Physical Review B 69, 041201 (2004)                                                                                                                                   

 

 

92. A. Polimeni, F. Masia, G. Baldassarri Hoeger von Hoegersthal, ,A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, and W. Stolz
“Tuning of the electron effective mass and exciton wavefunction size in GaAs1-xNx”
Physica E 21, 747 (2004)

 

 


2003

 

91. A. Polimeni, F. Masia, M. Felici, G. B. H. von Hogerstal, M. Bissiri, A. Frova, M. Capizzi, P. J. Klar, W. Stolz, I. A. Buyanova, W. M. Chen, H. P. Xin, ans C. W. Tu
“Hydrogen-related effects in diluted nitrides”
Physica B 340, 371 (2003)

 

90. A. Polimeni, G. Ciatto, L. Ortega, F. Jiang, F. Boscherini, F. Filippone, A. Amore Bonapasta, M. Stavola, and M. Capizzi
“Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys”
Physical Review B 68, 085204 (2003)                                                                                       

 

89. M. Geddo, G. Guizzetti, M. Capizzi, A. Polimeni, D. Gollub, and A. Forchel
“Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1-xAs1-yNy alloy”
Applied Physics Letters 83, 470 (2003)

 

88. G. Baldassarri Höger von Högersthal, A. Polimeni, F. Masia, M. Bissiri, and M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
“Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures”
Physical Review B 67, 233304 (2003)                                                                                       

 

87. A. Polimeni, M. Bissiri, M. Felici, M. Capizzi, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu
“Nitrogen passivation induced by atomic hydrogen: The GaP1-yNy case”
Physical Review B 67, 201303 (2003)                                                                                                    

 

86. F. Masia, A. Polimeni, G. Baldassarri H. V. H., M. Bissiri, M. Capizzi, P. J. Klar,and W. Stolz
“Early manifestation of localization effects in diluted Ga(AsN)”
Applied Physics Letters 82, 4474 (2003)                                                                                                    

 

85. I. A. Buyanova, M. Izadifard, W. M. Chen, A. Polimeni, M. Capizzi, H. P. Xin, and C. W. Tu
“Hydrogen-induced improvements in optical quality of GaNAs alloys”
Applied Physics Letters 82, 3662 (2003)                                                                    

 

84. A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
“Role of the host matrix in the carrier recombination of InGaAsN alloys”
Applied Physics Letters 82, 2805 (2003)

 

83. P. J. Klar, H. Gruning, M. Gungerich, W. Heimbrodt, J. Koch, T. Torunski, W. Stolz, A. Polimeni, and Capizzi
“Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation”
Physical Review B 67, 121206 (2003)                                                                                       

 

82. D. Ochoa, A. Polimeni, M. Capizzi, A. Patane, M. Henini, L. Eaves, and P. C. Main PC
“Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption”
Journal of Crystal Growth 251, 192 (2003)

 

81. P. J. Klar, H. Gruning, L. Chen, T. Hartmann, D. Golde, M. Gungerich, W. Heimbrodt, J. Koch, K. Volz, B. Kunert, T. Torunski, W. Stolz, A. Polimeni, M. Capizzi, G. Dumitras, L. Geelhaar, and H. Riechert
“Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures”
IEE Proceedings-Optoelectronics 150, 28 (2003)

 

80. A. Polimeni, M. Bissiri, G. Baldassarri Höger von Högersthal, M. Capizzi, D. Giubertoni, M. Barozzi, M. Bersani, D. Gollub, M. Fischer, and A. Forchel

”Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures”
Solid State Electronics 47, 447 (2003)

 

79. A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M.Fischer, A. Forchel
”Exciton Dynamics in InGaAsN/GaAs heterostructures”
Physica Status Solidi (a) 195, 558 (2003)

 

78. G. Ciatto, F. Boscherini, F. D’Acapito, S. Mobilio, G. Baldassarri H. V. H., A. Polimeni, M. Capizzi, D. Gollub, and A. Forchel
”Atomic ordering in (InGa)(AsN) quantum wells: An In K-edge X-ray absorption investigation”
Nuclear Instruments and Methods in Physics Research B 200, 34 (2003)

 

 

 

 

77. A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
”Exciton dynamics in InGaAsN/GaAss heterostructures”
Physica Status Solidi (a) 195, 558 (2003)

 


2002

 

76. A. Amore Bonapasta, F. Filippone, P. Giannozzi, M. Capizzi, and A. Polimeni
”Structure and passivation effects of mono- and dihydrogen complexes in GaAs1-yNy”
Physical Review Letters 89, 216401 (2002)                                                                 

75. M.Geddo, R. Pezzuto, M. Capizzi, A. Polimeni, D. Gollub, M. Fischer, A. Forchel
”Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures”
European Physical Journal B 30, 39 (2002)

74. G. Baldassarri Höger von Högersthal, M. Bissiri, F. Ranalli, V. Gaspari, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, A. Forchel
”Reversibility of the effects of hydrogen on the electronic properties of InxGa1-xAs1-yNy”
Physica E 13, 1082 (2002)

73. A. Polimeni, A. Patane’, R. K. Hayden, L. Eaves, M. Henini, P. C. Main, K. Uchida, N. Miura, J. Main, and G. Wurner
”Linewidth broadening of excitonic luminescence from quantum wells in pulsed magnetic fields”
Physica E 13, 349 (2002)

72. M. Bissiri, G. Baldassarri, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel
”Role of N clusters in InxGa1-xAs1-yNy band-gap reduction”
Physical Review B 66, 033311 (2002)                                                                                       

71. A. Polimeni, G. Baldassarri, M. Bissiri, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
”Role of hydrogen in III-N-V compound semiconductors”
Semiconductors Science and Technology 17, 797 (2002)                                 

70. M. Bissiri, G. Baldassarri, A. Polimeni,V. Gaspari, F. Ranalli, M. Capizzi, A. Amore Bonapasta, F. Jiang, M. Stavola, D. Gollub, M. Fischer, and A. Forchel
”Hydrogen-induced passivation of nitrogen in GaAs1-yNy “
Physical Review B 65, 235210 (2002)

69. M. Bissiri, V. Gaspari, G. Baldassarri, F. Ranalli, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
”Nitrogen-related complexes in Ga(AsN) and their interaction with hydrogen”
Physica Status Solidi a 190, 651 (2002)

68. M. Henini, A. Patane’, A. Polimeni, A. Levin, L. Eaves, P. C. Main, and G. Hill
”Electrical and optical properties of self-assembled quantum dots”
Microelectronics Journal 33, 313 (2002)

67. A. Polimeni, M. Bissiri, A. Augieri, G. Baldassarri, , M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel
”Reduced temperature dependence of the band gap in GaAs1-yNy investigated with photoluminescence”
Physical Review B 65, 235325 (2002)

2001

 

66. A. Levin, A. Patanè, F. Schindler, A. Polimeni, L. Eaves, P. C. Main, M. Henini
“Piezoelectric effects on the electron-hole dipole in In0.5Ga0.5As/GaAs self-assembled quantum dots”
Physica Status Solidi (b) 224, 37 (2001)

65. A. Patanè, A. Levin, A. Polimeni, L. Eaves, P. C. Main, and M. Henini
“Universality of the Stokes shift for a disordered ensemble of quantum dots”
Physica Status Solidi (b) 224 41 (2001)

64. A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
“Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells”
Physical Review B 63, 195320 (2001)                                                                                       

63. A. Polimeni, G. Baldassarri H. V. H., M. Bissiri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel
“Effect of hydrogen on the electronic properties of InxGa1-xAs1-yNy/GaAs quantum wells”
Physical Review B 63, 201304 (2001)                                                                                 

62. G. Baldassarri H. V. H., M. Bissiri, A. Polimeni, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel 
“Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells”
Applied Physics Letters 78,  3472 (2001)                                                                          

61. T. Surkova, A. Patanè, L. Eaves, P. C. Main, M. Henini, A. Polimeni, A. P. Knights and C. Jeynes
“Indium inter-diffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots”
Journal of Applied Physics 89, 6044 (2001)                                                  

60. M. Henini, A. Patanè, A. Polimeni, L. Eaves, P. C. Main, A. Levin, and G. Hill
“Optical properties and laser applications of (InGa)As/(AlGa)As self-assembled quantum dots”
Japanese Journal of Applied Physics part 1, 40 (3B), 2077 (2001)

59. M. Bissiri, V. Gaspari, A. Polimeni, G. Baldassarri Hoegerstal von Hoegersthal, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
“High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells”
Applied Physics Letters 79, 2585 (2001)

58. M. Bissiri, V. Gaspari, G. Baldassarri, F. Ranalli, A. Polimeni, M. Capizzi, A. Nucara, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
“Effect of hydrogen on the electronic properties of GaAs1-yNy heterostructures”
Acta Physica Polonica A 100, 365 (2001)

57. G. Baldassarri, F. Ranalli, M. Bissiri, V. Gaspari,, A. Polimeni, M. Capizzi, A. Nucara, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
“Hydrogen tuning of (InGa)(AsN) optical properties”
Acta Physica Polonica A 100, 373 (2001)

56. A. Polimeni, G. Baldassarri, M. Bissiri, V. Gaspari, F. Ranalli, M. Capizzi, A. Frova, A. Miriametro, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
”Interplay of nitrogen and hydrogen in InxGa1-xAs1-yNy/GaAs heterostructures”
Physica B 308, 850 (2001)

2000

 

55. A. Polimeni, A. Patanè, M. Henini, L. Eaves, P. C. Main, and G. Hill
“Carrier hopping in InAs/AlyGa1-yAs quantum dot heterostructures: Effects on optical and laser properties”
Physica E 7, 452 (2000)

54. A. Patane’, A. Polimeni, L. Eaves, M. Henini, P.C. Main, P.M. Smowton, E.J. Johnston, P.J. Hulyer E. Herrmann, G. M. Lewis, and G. Hill
“Experimental studies of the multimode spectral emission in quantum dot lasers”
Journal of Applied Physics 87, 1943 (2000)

53. S. Sanguinetti, G. Chiantoni, A. Miotto, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patane’, L. Eaves, P. C. Main
“Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case”
Micron 31, 309 (2000)

52. A. Patane’, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin, and G. Hill
“Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots”
Journal of Applied Physics 88, 2005 (2000)                                                               

51. A. Patanè, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin, and G. Hill
“Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well“
Physical Review B 62, 13595 (2000)                                                                                   

50. A. Patanè, A. Levin, A. Polimeni, L. Eaves, P. C. Main, M. Henini, and G. Hill
“Carrier thermalization within a disordered ensemble of self-assembled quantum dots”
Physical Review B 62, 11084 (2000)                                                                                         

49. A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
“Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells”
Applied Physics Letters 77, 2870 (2000)                                                                                 

48. A. Patanè, A. Levin, A. Polimeni, F. Schindler, L. Eaves, P. C. Main, and M. Henini
“Piezoelectric effects in In0.5Ga0.5As self-assembled quantum dots grown on (311)B GaAs substrates”
Applied Physics Letters 77, 2979 (2000)                                                              

47. L. Artús, R. Cuscó, S. Hernández, A. Patanè, A. Polimeni, M. Henini, and L. Eaves
“Quantum-dot phonons in self-assembled InAs/GaAs quantum dots: Dependence on the coverage thickness”
Applied Physics Letters 77, 3556 (2000)                                                                                 

46. T. P. Surkova, P. Kaczor, A. J. Zakrzewski, K. Swiatek, V. Y. Ivanov, M. Godlewski, A. Polimeni, L. Eaves, W. Giriat
“Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with iron”
Journal of Crystal Growth 214, 576 (2000)

45. S. Sanguinetti, G. Chiantoni, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P. C. Main
“3D island nucleation behaviour on high index substrates”
Materials Science and Engineering B-Solid State Materials for Advanced Technology 74, 239 (2000)

 


1999

 

44. A. Patanè, A. Polimeni, L. Eaves, P. C. Main, R. K. Marshall, M. Henini, Yu. V. Dubrovskii, A. E. Belyaev, and G. Hill
“Carrier dynamics in double barrier diodes incorporating quantum dots”
Physica B 272, 21 (2000)

43. A. Patanè, A. Polimeni, M. Henini, L. Eaves, P. C. Main and G. Hill
“Thermal effects in quantum dot lasers”
Journal of Applied Physics 85, 625 (1999)                                                                              

42. A. Polimeni, A. Patanè, M. Henini, L. Eaves, and P. C. Main
“Temperature dependence of the optical properties of InAs/AlyGa1-yAs self-organized quantum dots”
Physical Review B 59, 5064 (1999)                                                                              

41. S. G. Lyapin, I. E. Itskevich, I. A. Trojan, P. C. Klipstein, A. Polimeni, L. Eaves, P. C. Main, M. Henini
“Pressure-induced Gamma-X crossover in self-assembled In(Ga)As/GaAs quantum dots”
Physica Status Solidi (b) 211, 79 (1999)

40. A. Patanè, M. Henini, A. Polimeni, L. Eaves, P. C. Main, M. Al-Khafaji and A. G. Cullis
“Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes”
Superlattices and Microstructures 25 (1999)

39. A. Polimeni, A. Patanè, M. Henini, L. Eaves, P. C. Main, S. Sanguinetti and M. Guzzi
“Influence of high-index GaAs substrates on the growth of highly-strained (InGa)As/GaAs heterostructures”
Journal of Crystal Growth 201, 276 (1999)                                                                 

38. A. Patanè, A. Polimeni, M. Henini, L. Eaves, P. C. Main
“In0.5Ga0.5As quantum dot lasers grown on (100) and (311)B GaAs substrates”
Journal of Crystal Growth 201, 1139 (1999)

37. A. Polimeni, A. Patanè, A. Thornton, T. Ihn, L. Eaves, P. Main, M. Henini and G. Hill
“Optical and Resonant Tunneling Spectroscopy of Self-Assembled Quantum Dot Systems”
Japanese Journal of Applied Physics Part II: Letters 38, 535 (1999)

36. P. N. Brounkov, A. R. Kovsh, V. M. Ustinov, Y. G. Musikhin, N. N. Ledentsov, S. G. Konnikov, A. Polimeni, A. Patane’, P. C. Main, L. Eaves, and C. M. A. Kapteyn
“Emission of electrons from the ground and first excited states of self-organized InAs GaAs quantum dot structures”
Journal of Electronic Materials 28, 486 (1999)                                                                 

35. M. Henini, A. Polimeni, A. Patane’, L. Eaves, P. C. Main, and G. Hill
“Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots”
Microelectronics Journal 30, 319 (1999)

34. S. Sanguinetti, A. Miotto, S. Castiglioni, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patane’, L. Eaves, and P. C. Main
“Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces”
Microelectronics Journal 30, 419 (1999)

33. A. Patane’, A. Polimeni, P.C. Main, M. Henini, and L. Eaves
“High-temperature light emission from InAs quantum dots”
Applied Physics Letters 75, 814 (1999)

32. P.M. Smowton, E.J. Johnston, S.V. Dewar, P.J. Hulyer, H.D. Summers, A. Patanè, A. Polimeni, and M. Henini
“Spectral Analysis of InGaAs/GaAs Quantum Dot Lasers”
Applied Physics Letters 75, 2169 (1999)                                                                           

31. S. Sanguinetti, G. Chiantoni, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P.C. Main
“Substrate orientation dependence of island nucleation critical thickness in strained heterostructures”
Europhysics Letters 47, 701 (1999)

30. T. P. Surkova, M. Godlewski, K. Swiatek, P. Kaczor, A. Polimeni, L. Eaves, and W. Giriat
“Intra-shell transitions of 3D metal ions (Fe, Co, Ni) in II-VI wide-gap semiconductor alloys”
Physica B 274, 848 (1999)

 

 

29. M. Henini, P. N. Brounkov, A. Polimeni, S. T. Stoddart, P. C. Main, L. Eaves, A. R. Kovsh, Y. G. Musikhin, and S. G. Konnikov
“Electron and hole levels of InAs quantum dots in a GaAs matrix”
Superlattices and microstructures 25, 105 (1999)

1998

 

28. A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, P. C. Main, K. Uchida, R. K. Hayden, and N. Miura
“Magneto-photoluminescence and electroluminescence spectroscopy of self-assembled (InGa)As quantum dots on high index planes”
Physica E 2, 662 (1998)

27. R. K. Hayden, K. Uchida, N. Miura, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, and P. C. Main
“High field Magnetoluminescence Spectroscopy of self-Assembled (InGa)As Quantum dots on high Index Planes”
Physica B 246, 93 (1998)

26. R. K. Hayden, K. Uchida, N. Miura, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, and P. C. Main
“Photoluminescence Spectroscopy of self-assembled (InGa)As quantum dots in high magnetic fields”
Physica B 251, 262 (1998)

25. S. T. Stoddart, A. Polimeni, M. Henini, L. Eaves, P. C. Main, R. K. Hayden, K. Uchida and N. Miura
“Spectroscopic studies of self-assembled InAs and In0.5Ga0.5As quantum dots”
Applied Surface Science 123, 366 (1998)

24. A. Patanè, M. G. Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, L. Nasi, L. Lazzarini, G. Salviati, A. Bosacchi and S. Franchi
“Self-aggregated InAs quantum dots in GaAs”
Journal of Applied Physics 83, 5529 (1998)                                                                            

23. R. P. Campion, J. R. Fletcher, P. J. King, S. M. Morley, A. Polimeni and R. G. Ormson
“Helical current flow along 90 degrees twist boundaries in YBCO thin films”
Superconductors Science & Technology 11, 730 (1998)

22. S. C. Fortina, S. Sanguinetti, E. Grilli, M. Guzzi, M. Henini, A. Polimeni and L. Eaves
“InAs quantum dots grown on nonconventionally oriented GaAs substrates”
Journal of Crystal Growth 187, 126 (1998)                                                           

21. M. Capizzi, A. Frova, M. G. Alessi, A. Patanè, A. Polimeni and F. Martelli
“InxGa1-xAs/GaAs interfaces: From 2D islands to quantum dots”
Nuovo Cimento della Società Italiana di Fisica D-Condensed Matter 20, 915 (1998)

20. P. N. Brounkov, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, P. C. Main, A. R. Kovsh, Y. G. Musikhin and S. G. Konnikov
“Electronic structure of self-assembled InAs quantum dots in GaAs matrix”
Applied Physics Letters 73, 1092 (1998)                                                                                 

19. A. Polimeni, M. Henini, A. Patanè, L. Eaves, P. C. Main and G. Hill
“Optical properties and device applications of (InGa)As self- assembled quantum dots grown on (311)B GaAs substrates”
Applied Physics Letters 73, 1415 (1998)                                                                    

18. A. E. Belyaev, L. Eaves, P. C. Main, A. Polimeni, S. T. Stoddart, M. Henini.
“Capacitance spectroscopy of single-barrier GaAs/AlAs/GaAs structures containing InAs quantum dots”
Acta Physica Polonica A 94, 245 (1998)

17. S. Sanguinetti, S. C. Fortina, A. Miotto, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, L. Eaves
“Self-aggregation of inAs quantum dots on (N11) GaAs substrates”
Thin Solid Films 336, 9 (1998)

1997

 

16. A. Patanè, M. Grassi Alessi, A. Polimeni, M. Capizzi, F. Martelli, P. Borri, M. Gurioli, and M. Colocci
“Formation and relaxation of exciton-carbon acceptor complexes in GaAs”
Physical Review B 56, 3834 (1997)

15. A. Patanè, M. Grassi Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, M. Geddo, A. Bosacchi and S. Franchi
“Evolution of the optical properties of InAs/GaAs quantum dots for increasing InAs coverages”
Physica Status Solidi A-Applied Research 164, 493 (1997)                                                                                              (17)

14. D. Orani, A. Polimeni, A. Patanè, M. Capizzi, F. Martelli, A. D'Andrea, N. Tomassini, P. Borri, M. Gurioli, and M. Colocci
“Binding energy and lifetime of excitons in InxGa1-xAs/GaAs quantum wells”
Physica Status Solidi A-Applied Research 164, 107 (1997)

 

1996

 

13. A. Polimeni, A. Patanè, M. Capizzi, F. Martelli, L. Nasi, and G. Salviati
“Self-aggregation of quantum dots for very thin InAs layers grown on GaAs”
Physical Review B 53, R4213 (1996)                                                                     

12. F. Martelli, A. Polimeni, A. Patanè, M. Capizzi, P. Borri, M. Gurioli, M. Colocci, A. Bosacchi, and S. Franchi
“Exciton localization by potential fluctuation at the interface of InGaAs/GaAs quantum wells”
Physical Review B 53, 7421 (1996)                                                                                     

11. P. Borri, M. Gurioli, M. Colocci, F. Martelli, M. Capizzi, A. Patanè, and A. Polimeni
“Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures”
Journal of Applied Physics 80, 3011 (1996)                                                                                        

10. A. Polimeni, A. Patanè, M. Grassi Alessi, M. Capizzi, F. Martelli, A. Bosacchi, and S. Franchi
“Stokes shift in quantum wells: Trapping versus thermalization”
Physical Review B 54, 16389 (1996)                                                                            

 

1995

 

9.   A. Patanè, A. Polimeni, M. Capizzi and F. Martelli
“Linewidth analysis of the photoluminescence of InxGa1-xAs/GaAs quantum wells (x= 0.09, 0.18, 1.0)”
Physical Review B 52, 2784 (1995)                                                                                           

8.   M. Capizzi, F. Martelli, and A. Polimeni
“InGaAs/GaAs Quantum Wells: a Standard Photoluminescence System?”
Annales de Physique 20, C2-183 (1995)

7.   P. Borri, M. Gurioli, M. Colocci, F. Martelli, A. Polimeni, A. Patanè, and M. Capizzi
“Excitation energy Dependence of the Optical Properties of InGaAs/GaAs Quantum Wells Heterostructures”
Il Nuovo Cimento 17D, 1383 (1995)

1994

 

6.   M. Capizzi, A. Polimeni, A. Frova, F. Martelli, M. R. Bruni, and M.G. Simeone
“Above Barrier Confinement in InGaAs/GaAs Multiple Quantum-Well Structures”
Solid State Electronics 37, 641, (1994)

5.   A. Polimeni, D. Marangio, M. Capizzi, A. Frova, and F. Martelli
“Giant Photoluminescence Enhancement in Deuterated Highly Strained InAs/GaAs Quantum Wells”
Applied Physics Letters 65, 1254 (1994)                                                                           

4.   M. Capizzi, A. Frova, A. Polimeni, D. Marangio and F. Martelli
“Deuterium in In-Based Quantum Wells”
Superlattices, Microstructures and Microdevices 15, 113 (1994)

3.   M. Capizzi, A. Polimeni, B. Bonanni, V. Emiliani, A. Frova, D. Marangio and F. Martelli
“Deuterium in InGaAs/GaAs Strained Quantum Wells: an Optically active Impurity”
Semiconductors Science and Technology 9, 2233 (1994)

 

1993

 

2.   F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni, and M.G. Simeone
“Exciton confinement in GaAs quantum barriers”
Physical Review B 48, 1643 (1993)

1.   F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni, and M.G. Simeone
“Exciton Modes in Quantum Barriers”
Society of PhotoOptical Instrumentation Engineers 1985, 376 (1993)

 


Publications in Proceedings of International conferences

 

26c) M. Felici, A. Polimeni, A. Scordo, F. Masia, A. Frova, M. Capizzi, Y. Nabetani, T. Okuno, K. Aoki, T. Kato, T. Matsumoto, and T. Hirai
”Influence of the Host Lattice on the O-H Interaction in II-VI Semiconductors”

AIP Conference Proceedings 893, 327 (2007)

 

25c) M. Felici, R. Trotta, F. Masia,, A. Polimeni,, A. Miriametro, M. Capizzi, P. J. Klar, and W. Stolz
”Investigation of Compositional Disorder in GaAsN:H”

AIP Conference Proceedings 893, 313 (2007)

 

24c) M. Felici, A. Polimeni, F. Masia, R. Trotta, G. Pettinari, M. Capizzi, G. Salviati, L. Lazzarini, N. Armani, M. Piccin, G. Bais, F. Martelli, S. Rubini, A. Franciosi, and L. Mariucci
”In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors”
AIP Conference Proceedings 893, 31 (2007)

 

23c) M. Losurdo, M. M. Giangregorio, G. Bruno, T. –H. Kim, P. Wu, S. Choi, M. Morse, and A. Brown

“Modification of InN properties by interactions with hydrogen and nitrogen”
Mater. Res. Soc. Symposium Proceedings 892, 155 (2006)

 

22c) A. Polimeni, A. Vinattieri, M. Zamfirescu, F. Masia and M. Capizzi

“Carrier localization in (InGa)(AsN) alloys”

Proceedings of SPIE - The International Society for Optical Engineering 5725, 98 (2005)

 

21c) S. Mazzucato, D. Nardin, A. Polimeni, M. Capizzi, D. Granados, and J. M., García

“Hydrogenation of stacked self-assembled InAs/GaAs quantum dots”

(2005) AIP Conference Proceedings 772, 621 (2005)

 

20c) M. Felici, A. Polimeni, M. Capizzi, S. V. Dudiy, A. Zunger, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu

“High energy optical transitions in Ga(PN): Contribution from perturbed valence band”

AIP Conference Proceedings 772, 265 (2005)

 

19c) M. Geddo, G. Guizzetti, R. Pezzuto, A. Polimeni, M. Capizzi, M. Bissiri, G. Baldassarri H. v H., D. Gollub, and A. Forchel

“Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures”
Mater. Res. Soc. Symposium Proceedings 744, 531-536 (2003)

 

18c) A. Amore Bonapasta, F. Filippone, P. Giannozzi, M. Capizzi, and A. Polimeni

“Hydrogen-nitrogen Complexes in GaAsN Alloys the Role of Doping in the Formation of Mono- and Di-hydrogen Complexes”

Proceedings of the ICPS XXVI, ( Edinburgh United Kingdom , 2002) P62 (2003)

 

17c) G. Baldassarri H. v. H., M. Bissiri, A. Polimeni, M. Capizzi, A. Amore Bonapasta, F. Jiang, M. Stavola, M. Fischer, M. Reinhardt, and A. Forchel

“Hydrogen as a Probe of the Electronic and Lattice Properties of InGaAsN”

Proceedings of the ICPS XXVI, ( Edinburgh United Kingdom , 2002), G1.4 (2003)

 

16c) A. Augieri, G. Baldassarri H. v. H., M. Bissiri, M. Capizzi, A. Polimeni, I. K. Sou, and W. K. Ge

“Hydrogen Passivation of Isoelectronic Impurities in ZnTeS”

Proceedings of the ICPS XXVI, ( Edinburgh United Kingdom , 2002), H46 (2003)

 

15c) M. Capizzi, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Amore Bonapasta, F. Jiang, M. Stavola, M. Fischer, A. Forchel, I. K. Sou, and W. K. Ge

“Photoluminescence and Infrared Absorption Study of Isoelectronic Impurity Passivation by Hydrogen”

Mat. Res. Soc. Symp. Proc. 719, 251 (2002)

 

14c) A. Levin, A. Patanè, F. Schindler, A. Polimeni, L. Eaves, P. C. Main, and M. Henini

“Quantum-confined Stark shift in In0.5Ga0.5As self-assembled quantum dots grown on (100) and (311)B GaAs substrates”

Proceedings of the 25th Conference on the Physics of Semiconductors p. 1217 ( Osaka , Japan , 2001)

 

13c) A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel

“Temperature dependence of light emission and absorption in (InGa)(AsN)/GaAs single quantum wells”

Proceedings of the 25th Conference on the Physics of Semiconductors p. 539 ( Osaka , Japan , 2001)

 

 

 

 

12c) A. Patanè, A. Polimeni, Yu. V. Dubrovskii, P. N. Brounkov, A. E. Belyaev, R. K. Marshall, L. Eaves, P. C. Main, M. Henini, G. Hill

“How is resonant tunnelling affected by self-assembled quantum dots?”

IOP Conference Series 166, 131 (2000)

 

11c) A. Patanè, A. Polimeni, A. Levin, L. Eaves, P. C. Main, M. Henini, P. M. Smowton, G. Hill

“(InGa)As/(AlGa)As self-assembled quantum dots: optical properties and laser applications”

IOP Conference Series 166, 247 (2000)

 

10c) A. Patanè, A. Polimeni, M. Henini, L. Eaves, P.C. Main

“Energy emission tuning of InAs/GaAs self-assembled quantum dots by growth interruption”

IOP Conference Series 162, 451 (1999)

 

9c) A. Patanè, A. Polimeni, M. Henini, L. Eaves, P.C. Main, and G. Hill

“Laser properties of (InGa)As/GaAs self-assembled quantum dots grown on high-index planes”

IOP Conference Series 162, 439 (1999)

 

8c) A. Polimeni, M. Henini, R. K. Hayden, L. Eaves, P. C. Main, D. Cherns, Y. Atici, K. Uchida and N. Miura

“Effect of the natural substrate patterning on the growth of (InGaAs)/GaAs self-assembled quantum dots: microscopic and optical studies”

Proceedings of the 24th Conference on the Physics of Semiconductors (Jerusalem, Israel, 1998)

 

7c) P. N. Brounkov, A. R. Kovsh, Y. G. Musikhin and S. G. Konnikov, M. Henini, A. Polimeni, S. T. Stoddart, , L. Eaves, P. C. Main

“Electronic structure of self-assembled InAs quantum dots in GaAs matrix”

Proceedings of the 24th Conference on the Physics of Semiconductors (Jerusalem, Israel, 1998)

 

6c) S. G. Lyapin, I. E. Itskevich, I. A. Trojan, P. C. Klipstein, L. Eaves, P. C. Main, M. Henini and A. Polimeni.

“Photoluminescence study of self-assembled InAs/GaAs quantum dots under pressure”

Proceedings of the 24th Conference on the Physics of Semiconductors (Jerusalem, Israel, 1998)

 

5c) A. Polimeni, M. Henini, L. Eaves, S. T. Stoddart, P. C. Main, K. Uchida, R. K. Hayden, and N. Miura

“Optical and Microscopic Properties of In0.5Ga0.5As/GaAs highly strained heterostructures”

Proceedings of Physics Conferences Series (Insitute of Physics), 1997, no. 156 page 519.

 

4c) J. R. Fletcher, P. J. King, A . Polimeni, R. P. Campion, and S. M. Morley

“Helical current flow at the boundary between two tilted anisotropic conductors: 90° YBCO twist boundaries”

Institute of Physics Conferences Series ( Institute of Physics ), 1997, no. 158, page 245.

 

3c) A. Patanè, A. Polimeni, F. Martelli, M. Capizzi, L. Lazzarini, L. Nasi, and G. Salviati

“Absence of a critical thickness for the self-aggregation of quantum dots in InAs/GaAs quantum wells”

Proceedings of the 23rd Conference on the Physics of Semiconductors, page 1305, XXIII ICPS, Berlin , Germany , (1996)

 

2c) A. Polimeni, A. Patanè, M. Capizzi, and F. Martelli

“Photoluminescence of InAs/GaAs Quantum Dots”

Proceedings of Workshop on Highlights of Light Spectroscopy on Semiconductors, page 205, Frascati , Italy , (1996)

 

1c) M. Capizzi, A. Frova, A. Polimeni, D. Marangio and F. Martelli

“Photoluminescence of InAs/GaAs Near-Monolayer Quantum Wells Before and After Deuterium Irradiation”

Proceedings of the 22nd Conference on the Physics of Semiconductors, page 1149, XXII ICPS, Vancouver , Canada , (1994)